限流芯片-XC8107

85mΩ High Function Power Switch

■GENERAL DESCRIPTION

The XC8107 series is a P-channel MOSFET power switch IC with a low ON resistance. A current limit, reverse current prevention (prevents reverse current from V OUT to V IN), soft start, thermal shutdown, and an under voltage lockout (UVLO) are incorporated as protective functions. A flag function monitors the power switch status. The flag output has N-channel open drain configuration, and it outputs Low level signal when over-current or overheating is detected, or when the reverse current prevention is operated. The voltage level which is fed to CE pin determines the status of XC8107. The logic level of CE pin is selectable between either one of active high or active low.

■APPLICATIONS ●Set Top Boxes

●Digital TVs

●PCs

●USB Ports/USB Hubs

●HDMI ■FEATURES

Input Voltage : 2.5V～5.5V Output Current

: 2A

ON Resistance : 85mΩ@V IN=5.0V (TYP.)*USP-6C

100mΩ@V IN=5.0V (TYP.)

*SOT-25

Supply Current : 40μA@ V IN=5.0V

Stand-by Current : 0.1μA (MAX.)

Flag Delay Time : 7.5ms (TYP.)

* At over-current detection

: 4ms(TYP.)

* At reverse voltage detection

Protection Circuit : Reverse Current Prevention

Thermal Shutdown

Under Voltage Lockout(UVLO）

Soft-start

Functions : Flag Output

CE Pin Input Logic Selectable

Current Limit Response Time : 2μs(TYP.) *Reference value

Operating Ambient Temperature: -40

℃～+105℃

Packages : USP-6C, SOT-25

Environmentally Friendly : EU RoHS Compliant, Pb Free

■TYPICAL APPLICATION CIRCUIT

ETR33003-002

■TYPICAL PERFORMANCE

CHARACTERISTICS

XC8107xCxxxR

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Output Current : I OUT [A]

O

u

t

p

u

t

V

o

l

t

a

g

e

:

V

O

U

T

[

V

]

C

IN

=1.0μF(ceramic), C

L

=1.0μF(ceramic)

2/27 ■BLOCK DIAGRAM

XC8107 Series

* Diodes inside the circuit are an ESD protection diode and a parasitic diode.

Series ■PRODUCT CLASSIFICATION

●Ordering Information

XC8107①②③④⑤⑥-⑦

DESIGNATOR ITEM SYMBOL DESCRIPTION

A

① CE Logic

B

C

② Protection Circuits Type

D

Refer to Selection Guide

05 0.5A

10 1.0A

15 1.5A

③④ Maximum Output Current

20 2.0A

ER-G USP-6C

(3,000/Reel)

⑤⑥-⑦ (*1)Packages

MR-G SOT-25

(3,000/Reel)

●Selection Guide

TYPE CE LOGIC SELECTABLE SOFT-START CURRENT LIMITTER

AC Active High Yes Yes AD Active High Yes Yes BC Active Low Yes Yes BD Active Low Yes Yes

TYPE UVLO FLG OUTPUT REVERSE CURRENT PREVENTION

AC Yes Yes Yes AD Yes Yes Yes BC Yes Yes Yes BD Yes Yes Yes

TYPE

THERMAL

SHUT DOWN

LATCH

PROTECTION

AC Yes No AD Yes Yes BC Yes No BD Yes Yes (*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant.

4/27

■PIN CONFIGURATION

■PIN ASSIGNMENT

PIN NUMBER USP-6C

SOT-25

PIN NAME

FUNCTIONS

1 1 V OUT Output

2 - NC No connection

3 3 FLG Fault Report

4 4 CE ON/OFF Control

5 2 V SS Ground

6 5 V IN Power Input

■FUNCTION

TYPE

PIN NAME

SIGNAL

STATUS

H Active

L Stand-by A

OPEN Undefined State

(*1)

H Stand-by

L Active

B

CE

OPEN Undefined State (*1)

* Avoid leaving the CE pin open; set to any fixed voltage.

* The dissipation pad for the USP-6C packages should be solder-plated for mounting strength and heat dissipation.

Please refer to the reference mount pattern and metal masking. The dissipation pad should be connected to the V SS (No. 5) pin.

XC8107

Series

■ABSOLUTE MAXIMUM RATINGS

Ta=25℃

PARAMETER SYMBOL RATINGS UNITS Input Voltage V IN -0.3～+6.0 V Output Voltage V OUT -0.3～+6.0 V Output Current I OUT 2.8 A

CE Input Voltage V CE -0.3～+6.0 V FLG Pin Voltage V FLG

-0.3～+6.0 V

FLG Pin Current

I FLG 15 mA

120

USP-6C

1000 (PCB mounted) (*2)

250

Power Dissipation

SOT-25

Pd 600 (PCB mounted) (*2)

mW

Operating Ambient Temperature Topr

-40～+105 ℃ Storage Temperature

Tstg

-55～+125

℃

* All voltages are described based on the V SS .

(*1) Use with I OUT less than Pd/（V IN -V OUT ）.

(*2)

This is a reference data taken by using the test board. Please refer to page 24 and 25 for details.

6/27 ■ELECTRICAL CHARACTERISTICS

PARAMETER SYMBOL

CONDITIONS

MIN. TYP. MAX. UNITS CIRCUIT

Input Voltage

V IN -

2.5 - 5.5 V ①

V IN =3.3V (*1)

- 100 110 m Ω

USP-6C V IN =5.0V (*1)

- 85 104 m Ω

V IN =3.3V (*1)

- 115 135 m Ω

On Resistance

R ON SOT-25

V IN =5.0V (*1) - 100 120 m Ω

① Supply Current I SS V OUT =OPEN - 40 75 μA ②

Stand-by Current

I STBY

V IN =5.5V, V OUT =OPEN

V CE =V SS (XC8107A series) V CE =V IN (XC8107B series) - 0.01 1.0 μA

②

Switch Leakage Current I LEAK V IN =5.5V, V OUT =0V

V CE =V SS (XC8107A series) V CE =V IN (XC8107B series) - 0.01 1.0 μA ②

V OUT =V IN -0.3V, XC8107xx05 series 0.81 0.90 0.99 A V OUT =V IN -0.3V, XC8107xx10 series 1.26 1.40 1.54 A

V OUT =V IN -0.3V, XC8107xx15 series 1.71 1.90 2.09 A Current Limit I LIMT

V OUT =V IN -0.3V, XC8107xx20 series 2.16

2.40

2.

A

①

V OUT =0V,

XC8107xx05 series - 0.45 - A V OUT =0V,

XC8107xx10 series - 0.70 - A

V OUT =0V,

XC8107xx15 series - 0.95 - A Short-Circuit Current I SHORT

V OUT =0V,

XC8107xx20 series

- 1.20 - A

①

Current Limit Circuit

Response Time (*2)

t CLR

V IN =5.0V, V OUT : OPEN →0V Measure from V OUT =0V

to when current falls below a certain I LIM value

- 2.0 - μs ①

V IN =5.5V, XC8107A series 1.5 - 5.5 CE "H" Level Voltage V CEH V IN =5.5V, XC8107B series

- - 0.8

V ①

V IN =5.5V, XC8107A series - - 0.8

CE "L" Level Voltage V CEL V IN =5.5V, XC8107B series 1.5 - 5.5 V ①

CE "H" Level Current I CEH V IN =5.5V, V CE = 5.5V -0.1 - 0.1 μA ① CE "L" Level Current I CEL V IN =5.5V, V CE =0V -0.1 - 0.1 μA ① UVLO Detected Voltage V UVLOD V IN : 2.2V →1.7V

1.8 1.9

2.0 V

①

UVLO Released Voltage

V UVLOR

V IN : 1.7V →2.2V 1.9 2.0 2.1 V ①

UVLO Hysteresis

V UHYS -

- 0.1 -

V

①

NOTE:

Unless otherwise stated, V IN =5.0V, I OUT =1mA, V CE =V IN (XC8107A series) or V CE =V SS (XC8107B series)

(*1) I OUT =0.25A (XC8107xx05 series), I OUT =0.5A (XC8107xx10 series), I OUT =0.75A (XC8107xx15series), I OUT =1.0A (XC8107xx20 series) (*2)

Design reference value. This parameter is provided only for reference.

Ta=25℃

Series ■ELECTRICAL CHARACTERISTICS (Continued)

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

CIRCUIT

turn-on time t DLY(ON)R LOAD=10Ω, V CE=0V→2.2V - 0.60 1.00 ms

① turn-off time

t DLY(OFF)R LOAD=10Ω, V CE=2.2V→0V - 0.08 0.13 ms

①

FLG output FET

On-resistance

R FLG I FLG=10mA, V OUT

=

5.5V -

15

20

Ω

③ FLG output FET

Leakage Current

I FOFF V IN=5.5V, V FLG=5.5V, V OUT

=OPEN- 0.01 0.1 μA③

t FD1over-current condition 6.5 7.5 8.5 ms ① FLG delay time

t FD2 reverse-voltage

condition 2.7 4.0 4.7 ms ① Reverse Current I REV

V IN=0V, V OUT=5.5V

V CE=5.0V (XC8107A series)

V CE=V SS (XC8107B series)

- 0.1 1.0 μA①

SOT-25 - 170 - Reverse Current

Prevention

Detect Voltage

V REV_D

V IN: 5.0V→4.7V

V OUT=5.0V USP-6C - 140 -

mV ①

Thermal Shutdown

Detect Temperature

T TSD Junction

Temperature - 150 - ℃ ①

Thermal Shutdown

Release Temperature

T TSR Junction

Temperature - 130 - ℃ ①

Thermal Shutdown

Hysteresis Width

T HYS Junction

Temperature - 20 - ℃ ①

NOTE:

Unless otherwise stated, V IN=5.0V, I OUT=1mA, V CE=V IN (XC8107A series) or V CE=V SS (XC8107B series)

■TIMING CHART

●turn-on time, turn-off time

XC8107 Series, Type A XC8107 Series, Type B

Ta=25℃

8/27 ■TEST CIRCUITS

C IN =1.0μF, C L =1.0μF

1) CIRCUIT ①

2) CIRCUIT ② 3) CIRCUIT ③ V CE

(ceramic)

FLG V

A

V CE

The XC8107 series is a P-channel MOSFET power switch IC.

The XC8107 series consists of a CE circuit, UVLO circuit, thermal shutdown circuit, current limiter circuit, reverse current prevention circuit, control block and others. The gate voltage of the power switch transistor is controlled with control block. The current limiter circuit and reverse current prevention circuit will operate based on the output voltage and output current. (See the BLOCK DIAGRAM below)

BLOCK DIAGRAM (XC8107 Series)

The voltage level which is fed to CE pin controls the status of this IC. If either “H” level or “L” level which is defined as the electrical specification is fed to CE pin, then XC8107 can operate in standard manner. However, if the middle voltage which is neither “H” level nor “L” level is fed to CE pin, the consumption current will increase due to the shoot-through current at internal circuits. Also if CE pin is open, the status of XC8107 cannot be fixed and the behavior will be unstable.

For protection against heat damage of the ICs, thermal shutdown function is built in. When the internal junction temperature reaches the temperature limit, the thermal shutdown circuit operates and the power switch transistor will turn OFF. The IC resumes its operation when the thermal shutdown function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the thermal shutdown release temperature. When the thermal shutdown circuit detects higher junction temperature than the detect temperature, the voltage level of FLG pin is low level. When the thermal shutdown circuit detects lower junction temperature than the release temperature, the thermal shutdown function is released and the voltage level of FLG pin is high level.

When the V IN pin voltage goes down to lower voltage than UVLO detected voltage, the power switch transistor turns OFF by UVLO function in order to prevent false output caused by unstable operation of the internal circuitry. When the V IN pin voltage goes up to higher voltage than UVLO released voltage, the UVLO function is released and the power switch transistor can turn ON.

The soft-start circuit can reduce the in-rush current charged on the output capacitor when IC starts up. Additionally, due to the reduction of the in-rush current, the circuit can reduce the fluctuation of the input voltage as well. The soft-start time is optimized internally and defined as turn-on time. (TYP: 0.6ms)

■OPERATIONAL EXPLANATION (Continued)

When the output current reaches the current limit value, the constant current limiter circuit activates and as a result, the output voltage goes down.

If the short circuit comes at the V OUT pin, the output current is limited to the current which is specified as the short-circuit current value. If the over-current state lasts for 7.5ms (TYP.), the FLG pin changes to Low level output.

Two types are available for the current limiter circuit: an auto recovery type (product type C) and a latch off type (product type D). After the current limiter circuit activates and the FLG pin outputs low level, the operation is different between these two types.

The auto recovery type continuously limits the output current by the current limit value.

When the over-current status finishes and the status of that the output current is less than the current limit value continues for 7.5ms (TYP.) or more, the voltage of FLG pin goes up “H” level again.

The latch off type turns off the power switch transistor after the FLG pin outputs Low level. The off state is maintained regardless of whether the over-current state is released.

Latch operation is released by turning off the IC with the CE pin signal and then restarting, or by lowering the input voltage below the UVLO detected voltage once and after that raising it higher than UVLO released voltage.

An internal circuit is built in that prevents reverse current from the V OUT pin to the V IN pin.

When the difference between input voltage and V OUT pin voltage is higher than the detect voltage set internally, the reverse current prevention circuit activates, and the power switch transistor turns off, then the reverse current from the V OUT pin to the V IN pin is reduced to 0.1μA (TYP.).

If the reverse-voltage state lasts for 4ms (TYP.), the FLG pin changes to Low level output.

Two types are available for the reverse current prevention circuit: the auto recovery type (product type C) and the latch off type (product type D). After the reverse current prevention circuit activates and the FLG pin outputs low level, the operation is different between these two types.

On the auto recovery type, when the output voltage drops below the input voltage, the reverse current prevention circuit stops immediately, and the power switch transistor turns on again. If the output voltage remains lower than the input voltage for 4ms (TYP.), the FLG pin returns to High level output.

On the latch off type, the power switch transistor remains in the off state even if the reverse voltage state is released.

Latch operation is released by turning off the IC with the CE pin signal and then restarting, or by lowering the input voltage below the UVLO detected voltage once and after that raising it higher than UVLO released voltage.

10/27Series ■OPERATIONAL EXPLANATION (Continued)

The flag circuit is built in which monitors the state of the power switch.

The FLG pin outputs Low level when the reverse current prevention function is operating. A resistance of 10kΩ to 100kΩ is recommended for the FLG pin pull-up resistance.

Auto recovery type (product type C)

Protective function FLG pin Low level output Return to FLG pin High level output

Current limiter 7.5ms after over-current detection 7.5ms after over-current release Reverse current prevention 4.0ms after reverse voltage detection 4.0ms after reverse voltage release Thermal shutdown Same time as overheat state is detected Same time as overheat state is released

Latch off type (product type D)

Protective function FLG pin Low level output Return to FLG pin High level output

Current limiter 7.5ms after over-current detection When latch operation is released Reverse current prevention 4.0ms after reverse voltage detection When latch operation is released Thermal shutdown Same time as overheat state is detected Same time as overheat state is released

■NOTES ON USE

1. For the phenomenon of temporal and transitional voltage decrease or voltage increase, the IC may be damaged or

deteriorated if IC is used beyond the absolute MAX. specifications.

2. Where wiring impedance is high, operations may become unstable due to noise depending on output current.

Please keep the resistance low between V IN and V SS wiring in particular.

3. Please place the input capacitor (C IN) and the output capacitor (C L) as close to the IC as possible.

For the input or output capacitor, a capacitance of 1.0μF or higher is recommended.

4. When the voltage which is higher than the maximum input voltage is fed to the V IN pin, and V OUT is shorted to the V SS level, in

this case the short circuit may cause a fatal impact to operation for the IC. Please use within the operational voltage range.

5. Torex places an importance on improving our products and its reliability.

However, by any possibility, we would request user fail-safe design and post-aging treatment on system or equipment. 12/27

■TYPICAL PERFORMANCE CHARACTERISTICS

(1) UVLO detect Voltage vs. Input Voltage

(2) UVLO release Voltage vs. Input Voltage

(3) UVLO threshold Voltage vs. Ambient Temperature

(4)　Stand-by Current vs. Input Voltage (5)　Stand-by Current vs. Ambient Temperature

XC8107xxxxxR

0.0

0.51.01.52.02.53.01.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10

Input Voltage : V IN [V]

U V L O r e l e a s e V o l t a g e : U V L O [V ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.00.51.01.52.02.53.0-50

-250255075100125

Ambient Temperature : Ta [℃]

U V L O t h r e s h o l d V o l t a g e : U V L O [V

]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.0

0.51.01.52.02.53.0

0.00.51.01.52.02.53.03.54.04.55.05.5

Input Voltage : V IN [V]

S t a n d -b y C u r r e n t : I s t b y [μA ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.0

0.51.01.52.02.53.01.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10

Input Voltage : V IN [V]

U V L O d e t e c t V o l t a g e : U V L O [V ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.00.51.01.52.02.53.0-50

-250255075100125

Ambient Temperature : Ta [℃]

S t a n d -b y C u r r e n t : I s t b y [μA

]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

14/27 (6)　Supply Current vs. Input Voltage（sweep up）

(7)　Supply Current vs. Ambient Temperature

(8)　CE "H" Level Voltage vs. Input Voltage (9)　CE "L" Level Voltage vs. Input Voltage

(10)　CE threshold Voltage vs. Ambient Temperature

XC8107xxxxxR

51015202530354045500.00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

Input Voltage : V IN [V]

S u p p l y C u r r e n t : I S S [μA ]

V IN =5.0V, C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

05101520253035404550-50

-250255075100125

Ambient Temperature : Ta [℃]

S u p p l y C u r r e n t : I S S [μA

]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.00.51.01.52.02.53.0-50

-250255075100125

Ambient Temperature : Ta [℃]

C E t h r e s h o l d V o l t a g e : V C E [V

]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.00.51.01.52.02.53.00.0

0.5

1.0 1.5

2.0 2.5

Input Voltage : V IN [V]

C E "H " L e v e l V o l t a g e : V C E H [V ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.00.51.01.52.02.53.00.0

0.5

1.0 1.5

2.0 2.5

Input Voltage : V IN [V]

C E "L " L e v e l V o l t a g e : V C E L [V ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(11)　On Resistance vs. Input Voltage (SOT-25)

(12)　On Resistance

vs. Ambient Temperature (SOT-25)

(13)　On Resistance vs. Input Voltage (USP-6C)(14)　On Resistance

vs. Ambient Temperature (USP-6C)

(15)　turn-on time vs. Input Voltage (16)　turn-on time vs. Ambient Temperature

XC8107xxxxxR

0.00.10.20.3

0.40.50.60.7-50

-250255075100125

Ambient Temperature : Ta [℃]

t u r n -o n t i m e : t D L Y (O N ) [m s ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.00.10.20.30.40.50.60.72.0

2.5

3.0 3.5

4.0 4.5

5.0 5.5

6.0

Input Voltage : V IN [V]

t u r n -o n t i m e : t D L Y (O N ) [m

s ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxMR

020406080100120140160180-50

-250255075100125

Ambient Temperature : Ta [℃]

O n R e s i s t a n c e : R o n [m Ω]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxMR

020406080100120140160

1802.0

2.5

3.0 3.5

4.0 4.5

5.0 5.5

6.0

Input Voltage : V IN [V]

O n R e s i s t a n c e : R o n [m

Ω]C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxER

020406080100120140160180-50

-250255075100125

Ambient Temperature : Ta [℃]

O n R e s i s t a n c e : R o n [m Ω]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxER

020406080100120140160

1802.0

2.5

3.0 3.5

4.0 4.5

5.0 5.5

6.0

Input Voltage : V IN [V]

O n R e s i s t a n c e : R o n [m

Ω]C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

16/27

(17)　turn-off time vs. Input Voltage

(18)　turn-off time vs. Ambient Temperature

(19)　FLG delay time over-current (20)　FLG delay time reverse-voltage vs. Ambient Temperature

vs. Ambient Temperature

(21)　Output Voltage vs. Output Current

XC8107xxxxxR

0.00

0.010.020.030.040.050.060.070.080.09-50

-250255075100125

Ambient Temperature : Ta [℃]

t u r n -o f f t i m e : t D L Y (O F F ) [m s ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.00

0.010.020.030.040.050.060.070.080.092.0

2.5

3.0 3.5

4.0 4.5

5.0 5.5

6.0

Input Voltage : V IN [V]

t u r n -o f f t i m e : t D L Y (O F F ) [m s

]

V IN =4.3V, C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

4.04.5

5.05.5

6.06.5

7.07.5

8.08.5

9.0-50

-250255075100125

Ambient Temperature : Ta [℃]

F L

G o v e r -c u r r e n t : t F D [m s ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xxxxxR

0.00.51.01.52.02.53.03.54.04.55.0-50

-250255075100125

Ambient Temperature : Ta [℃]

F L

G r e v e r s e -v o l t a g e : t F D [m s

]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xCxxxR

0.01.02.03.04.05.06.00.0

0.5

1.0 1.5

2.0 2.5

3.0 3.5

4.0Output Current : I OUT [A]

O u t p u t V o l t a g e : V O U T [V

]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

XC8107xDxxxR

0.0

1.02.03.04.05.06.0

0.00.5

1.0 1.5

2.0 2.5

3.0 3.5

4.0

Output Current : I OUT [A]

O u t p u t V o l t a g e : V O U T [V ]

C IN =1.0μF(ceramic), C L =1.0μF(ceramic)

(24)　turn-on Delay vs. Rise Time (C L=120μF)(25)　turn-oｆｆ Delay vs. Fall Time (C L=120μF)

(26)　Short Circuit Current, Device Enabled Into Short

XC8107xx10xR

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

Time [40μs/div]

V

o

l

t

a

g

e

:

[

V

]

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

S

u

p

p

l

y

C

u

r

r

e

n

t

:

I

s

u

p

p

l

y

[

A

]

V

CE

=0V→5.0V, tr=5μs, Ta=25℃

V

IN

=5.0V, C

IN

=C

L

=1.0μF(ceramic)

XC8107xx10xR

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

Time [40μs/div]

V

o

l

t

a

g

e

:

[

V

]

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

S

u

p

p

l

y

C

u

r

r

e

n

t

:

I

s

u

p

p

l

y

[

A

]

V

CE

=5.0V→0V, tf=5μs, Ta=25℃

V=5.0V, C=1.0μF, C=120μF(ceramic) XC8107xx10xR

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

S

u

p

p

l

y

C

u

r

r

e

n

t

:

I

s

u

p

p

l

y

[

A

]

V

CE

=0V→5.0V, tr=5μs, R

L

=10Ω, Ta=25℃

V

IN

=5.0V, C

IN

=1.0μF, C

L

=120μF(ceramic)

XC8107xx10xR

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

Time [500μs/div]

V

o

l

t

a

g

e

:

[

V

]

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

S

u

p

p

l

y

C

u

r

r

e

n

t

:

I

s

u

p

p

l

y

[

A

]

V

CE

=5.0V→0V, tf=5μs, R

L

=10Ω, Ta=25℃

V

IN

=5.0V, C

IN

=1.0μF, C

L

=120μF(ceramic)

XC8107xx10xR

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

Time [100μs/div]

V

o

l

t

a

g

e

:

[

V

]

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

S

u

p

p

l

y

C

u

r

r

e

n

t

:

I

s

u

p

p

l

y

[

A

]

V

CE

=0V→5.0V, tr=5μs, R

L

=10Ω, Ta=25℃

V

IN

=5.0V, C

IN

=C

L

=1.0μF(ceramic)

XC8107xx10xR

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

Time [100μs/div]

V

o

l

t

a

g

e

:

[

V

]

-0.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

S

u

p

p

l

y

C

u

r

r

e

n

t

:

I

s

u

p

p

l

y

[

A

]

V

CE

=5.0V→0V, tf=5μs, R

L

=10Ω, Ta=25℃

V

IN

=5.0V, C

IN

=C

L

=1.0μF(ceramic)

18/27 （27）　Short-Curcuit Transient Response

（28）　Short-Curcuit Transient Response

(V OUT =5.0Ω→short, C L =1.0μF)

(V OUT =short→5.0Ω, C L =1.0μF)

（29）　Short-Curcuit Transient Response

（30）　Short-Curcuit Transient Response

(V OUT =open→short, C L =1.0μF)

(V OUT =short→open, C L =1.0μF)

（31）　Short-Curcuit Transient Response

（32）　Short-Curcuit Transient Response

(V OUT =5.0Ω→short, C L =120μF)

(V OUT =short→5.0Ω, C L =120μF)

XC8107xC10xR

-8.0

-6.0-4.0

-2.00.0

2.0

4.06.0

8.0

Time [2ms/div]

V o l t a g e : [V ]

-0.5

0.00.5

1.01.5

2.02.5

3.0

3.5S u p p l y C u r r e n t : I s u p p l y [A ]

V IN =5.0V, tf=100μs, Ta=25℃

FLG=100kΩ, C IN =C L =1.0μF(ceramic)

XC8107xC10xR

-8.0

-6.0-4.0-2.00.02.04.06.08.0

Time [2ms/div]

V o l t a g e : [V ]

-0.5

0.00.51.01.52.02.53.03.5S u p p l y C u r r e n t : I s u p p l y [A ]V IN =5.0V, tr=100μs, Ta=25℃

FLG=100kΩ, C =C =1.0μF(ceramic)

XC8107xC10xR

-8.0

-6.0-4.0-2.00.0

2.04.06.08.0Time [2ms/div]

V o l t a g e : [V ]

-0.5

0.00.5

1.01.5

2.02.5

3.0

3.5

S u p p l y C u r r e n t : I s u p p l y [A ]

V IN =5.0V, tf=100μs, Ta=25℃

FLG=100kΩ, C IN =C L =1.0μF(ceramic)

XC8107xC10xR

-8.0

-6.0

-4.0-2.00.02.0

4.06.0

8.0

Time [2ms/div]

V o l t a g e : [V ]

-0.5

0.0

0.51.01.52.02.53.03.5S u p p l y C u r r e n t : I s u p p l y [A ]

V IN =5.0V, tr=100μs, Ta=25℃

FLG=100kΩ, C =C =1.0μF(ceramic)XC8107xC10xR

-8.0

-6.0-4.0

-2.00.0

2.04.06.08.0Time [2ms/div]

V o l t a g e : [V ]

-0.5

0.00.5

1.01.5

2.02.5

3.0

3.5S u p p l y C u r r e n t : I s u p p l y [A ]

V IN =5.0V, tf=100μs, Ta=25℃

FLG=100kΩ, C IN =1.0μF, C L =120μF(ceramic)XC8107xC10xR

-8.0

-6.0-4.0

-2.00.02.04.06.08.0Time [2ms/div]

V o l t a g e : [V ]

-0.5

0.00.51.01.52.02.5

3.03.5S u p p l y C u r r e n t : I s u p p l y [A ]V IN =5.0V, tr=100μs, Ta=25℃

Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

（33）　Short-Curcuit Transient Response

（34）　Short-Curcuit Transient Response

(V OUT =open→short, C L =120μF)

(V OUT =short→open, C L =120μF)

(35)　UVLO Transient Response (C L =1.0μF)

(36)　UVLO Transient Response (C L =120μF)

XC8107xxxxxR

-8.0

-6.0-4.0

-2.00.0

2.04.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-0.5

0.00.51.01.52.02.5

3.0

3.5S u p p l y C u r r e n t : I s u p p l y [A ]V IN =0V→5.0V, tr=3ms, Ta=25℃R =5Ω, C =C =1.0μF(ceramic)

XC8107xxxxxR

-8.0

-6.0

-4.0-2.00.02.04.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-0.5

0.00.51.01.52.02.53.03.5S u p p l y C u r r e n t : I s u p p l y [A ]

V IN =5.0V→0V, tf=3ms, Ta=25℃R =5Ω, C =C =1.0μF(ceramic)XC8107xxxxxR

-8.0

-6.0-4.0-2.00.02.04.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-0.5

0.00.51.01.52.02.53.03.5S u p p l y C u r r e n t : I s u p p l y [A ]

V IN =0V→5.0V, tr=3ms, Ta=25℃

R =5Ω, C =1.0μF, C =120μF(ceramic)

XC8107xxxxxR

-8.0

-6.0-4.0-2.00.0

2.04.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-0.5

0.00.5

1.01.5

2.02.5

3.03.5S u p p l y C u r r e n t : I s u p p l y [A ]V IN =5.0V→0V, tf=3ms, Ta=25℃

R L =5Ω, C IN =1.0μF, C L =120μF(ceramic)

XC8107xC10xR

-8.0

-6.0-4.0-2.00.02.0

4.06.08.0Time [2ms/div]

V o l t a g e : [V ]

-0.5

0.00.5

1.01.5

2.02.5

3.0

3.5S u p p l y C u r r e n t : I s u p p l y [A ]V IN =5.0V, tf=100μs, Ta=25℃

FLG=100kΩ, C IN =1.0μF, C L =120μF(ceramic)

XC8107xC10xR

-8.0

-6.0

-4.0-2.00.02.04.06.08.0Time [2ms/div]

V o l t a g e : [V ]

-0.5

0.00.51.01.52.02.53.03.5S u p p l y C u r r e n t : I s u p p l y [A ]V IN =5.0V, tr=100μs, Ta=25℃

FLG=100kΩ, C IN =1.0μF, C L =120μF(ceramic)

20/27 ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(37)　Reverse Voltage Detected Voltage (C L =1.0μF)

(38)　Reverse Voltage Released Voltage (C L =1.0μF)

(39)　Reverse Voltage Detected Voltage (C L =120μF)

(40)　Reverse Voltage Released Voltage (C L =120μF)

（41）　CE Transient Response

XC8107xxxxxR

-8.0

-6.0-4.0-2.00.02.0

4.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-2.0

-1.00.01.02.03.04.05.0

6.0S u p p l y C u r r e n t : I s u p p l y [A ]V IN =5.0V, R L =5Ω, Ta=25℃XC8107xxxxxR

-8.0

-6.0-4.0-2.00.02.0

4.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-2.0

-1.00.01.02.03.0

4.05.06.0

S u p p l y C u r r e n t : I s u p p l y [A ]VIN=5.0V, R L =5Ω, Ta=25℃C =C =1.0μF(ceramic)

XC8107xxxxxR

-8.0

-6.0-4.0-2.00.02.04.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-2.0

-1.00.01.02.03.04.05.06.0

S u p p l y C u r r e n t : I s u p p l y [A ]V IN =5.0V, Ta=25℃

C IN =1.0μF, C L =120μF(ceramic)

XC8107xxxxxR

-8.0

-6.0-4.0

-2.00.02.04.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-2.0

-1.00.0

1.02.03.04.05.06.0S u p p l y C u r r e n t : I s u p p l y [A ]V IN =5.0V, Ta=25℃

C =1.0μF, C =120μF(ceramic)

XC8107xxxxxR

-8.0

-6.0

-4.0-2.00.02.04.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-0.005

0.0000.0050.0100.0150.0200.0250.0300.035

I n R u s h C u r r e n t : I R U S H [A ]

V CE =0→5.0V, tr=5μs, Ta=25℃V IN =5.0V, C IN =C L =1.0μF(ceramic)

XC8107xxxxxR

-8.0

-6.0-4.0-2.00.02.04.06.08.0Time [500μs/div]

V o l t a g e : [V ]

-0.5

0.00.51.01.52.02.53.03.5I n R u s h C u r r e n t : I R U S H [A ]V CE =0→5.0V, tr=5μs, Ta=25℃

V IN =5.0V, C IN =1.0μF, C L =120μF(ceramic)

Series

■ TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(42)　Short Applied

(43)　Current Limit adapted time

XC8107xx10xR

-8.0

-6.0-4.0

-2.00.02.0

4.06.08.0Time [2μs/div]

V o l t a g e : [V ]

-2.0

0.02.0

4.06.08.010.012.0

14.0I n R u s h C u r r e n t : [A ]

V IN =5.0V, Ta=25℃

XC8107xx10xR

012345671011121314150.0

1.0

2.0

3.0

4.0

5.0

6.0

Peak Limit Current [A]

C u r r e n t L i m i t R e s p o n s e : [μs ]

V IN =5.0V, Ta=25℃

C L =open

22/27 ■PACKAGING INFORMATION

●USP-6C (unit:mm)

●SOT-25

(unit:mm)

0.20±0.05

0.10±0.05

●USP-6C Reference Pattern Layout (unit: mm) ●USP-6C Reference Metal Mask Design (unit: mm)

24/27

■PACKAGING INFORMATION (Continued)

● SOT-25 Power Dissipation

Power dissipation data for the SOT-25 is shown in this page.

The value of power dissipation varies with the mount board conditions. Please use this data as the reference data taken in the following condition.

1. Measurement Condition

Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free

Board: Dimensions 40 x 40 mm (1600 mm 2

in one side)

Copper (Cu) traces occupy 50% of the board area

In top and back faces

Package heat-sink is tied to the copper traces

(Board of SOT-26 is used)

Material: Glass Epoxy (FR-4) Thickness: 1.6mm Through-hole 4 x 0.8 Diameter

2. Power Dissipation vs. Ambient Temperature (105℃)

Board Mount (Tjmax=125℃)

Ambient Temperature (℃)

Power Dissipation Pd (mW)

Thermal Resistance (℃/W)

25 600

105 120

166.67

Pd-Ta特性グラフ

85周囲温度Ta（℃）

Evaluation Board (Unit: mm)

Ambient Temperature: Ta (

25/27

XC8107

Series

■PACKAGING INFORMATION (Continued)

● USP-6C Power Dissipation

Power dissipation data for the USP-6C is shown in this page.

The value of power dissipation varies with the mount board conditions. Please use this data as the reference data taken in the following condition.

1. Measurement Condition

Condition: Mount on a board Ambient: Natural convection Soldering: Lead (Pb) free

Board: Dimensions 40 x 40 mm (1600 mm 2

in one side)

Copper (Cu) traces occupy 50% of the board area

In top and back faces

Package heat-sink is tied to the copper traces

Material: Glass Epoxy (FR-4) Thickness: 1.6mm Through-hole 4 x 0.8 Diameter

2. Power Dissipation vs. Ambient Temperature (105℃)

Board Mount (Tjmax=125℃)

Ambient Temperature (℃)

Power Dissipation Pd (mW)

Thermal Resistance (℃/W)

25 1000

105 200

100.00

85

125

周囲温度Ta（℃）

Evaluation Board (Unit: mm)

Ambient Temperature: Ta (

26/27

■MARKING RULE

④⑤ represents production lot number

01～09, 0A ～0Z, 11～9Z, A1～A9, AA ～AZ, B1～ZZ in order.

(G, I, J, O, Q, W excluded) * No character inversion used.

① represents products series

MARK

PRODUCT SERIES

Z XC8107******-G

② represents product type MARK

CE LOGIC

PROTECTION CIRCUIT TYPE

PRODUCT SERIES 1 Active High Auto-recovery XC8107AC****-G 2 Active High Latch-off XC8107AD****-G 3 Active Low Auto-recovery XC8107BC****-G 4 Active Low Latch-off

XC8107BD****-G

③ represents maximum output current MARK

CURRENT (A)

PRODUCT SERIES

1 0.5 XC8107**05**-G

2 1.0 XC8107**10**-G

3 1.5 XC8107**15**-G

4 2.0

XC8107**20**-G

①

②

③

④

⑤

123

5

4

SOT-25

654

USP-6C

Series

27/27