irf9530n[1]

HEXFET ® Power MOSFET

PD - 91482C

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V

GS @ -10V -14I D

@ T C = 100°C Continuous Drain Current, V GS @ -10V -10A I DM

Pulsed Drain Current -56P D @T C = 25°C Power Dissipation 79W Linear Derating Factor 0.53W/°C V GS Gate-to-Source Voltage

± 20V E AS Single Pulse Avalanche Energy 250mJ I AR Avalanche Current

-8.4A E AR Repetitive Avalanche Energy 7.9mJ dv/dt Peak Diode Recovery dv/dt -5.0V/ns T J Operating Junction and

-55 to + 175T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

––– 1.9R θCS Case-to-Sink, Flat, Greased Surface 0.50–––°C/W

R θJA

Junction-to-Ambient

–––

62

Thermal Resistance

l Advanced Process Technology l Dynamic dv/dt Rating

l 175°C Operating Temperature l Fast Switching l P-Channel

l

Fully Avalanche Rated

Description

5/13/98

IRF9530N

IRF9530N

IRF9530N

IRF9530N

IRF9530N

IRF9530N

IRF9530N

http://www.irf.com/package/