PA2561L1-1(NEC)光耦规格书

The information in this document is subject to change without notice.

©

1992

Document No. P129EJ4V0DS00 (4th edition)(Previous No. LC-2225)

Date Published August 1997 NS Printed in Japan

PHOTOCOUPLER

PS2561-1,-2, PS2561L-1,-2

HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES

The mark shows major revised points.

DESCRIPTION

The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.

PS2561-1, -2 are in a plastic DIP (Dual In-line Package) and PS2561L-1, -2 are lead bending type (Gull-wing) for surface mount.

FEATURES

•High isolation voltage

BV = 5 000 Vr.m.s.: standard products

BV = 3 750 Vr.m.s.: VDE0884 approved products (Option)

•High collector to emitter voltage (V CEO = 80 V)•High current transfer ratio (CTR = 200 % TYP.)•High-speed switching (t r = 3 µs TYP., t f = 5 µs TYP.)•UL approved (File No. E72422 (S) )•CSA approved (No. CA 101391)

•BSI approved (BS415, BS7002) No. 7112•SEMKO approved (SS4410165) No. 9317144•NEMKO approved (NEK-HD 195S6) No. A21409•DEMKO approved (Section 101, 137) No. 300535•FIMKO approved (E69-) No. 167265-08•VDE0884 approved (Option)

APPLICATIONS

•Power supply •Telephone/FAX.•FA/OA equipment

•Programmable logic controller

2

PACKAGE DIMENSIONS (in millimeters)DIP Type

5.1 MAX.

6.5

3.8M A X .

4.55M A X .

2.8M I N .

0.65

2.54

7.62

0.50 ± 0.100.25M

43

12PS2561-1 (New Package)

10.2 MAX.

1.25±0.15

6.5

3.8M A X .

4.55M A X .

2.8M I N .0.65

2.54

7.62

0.50 ± 0.100.25M

871265

340 to 15˚

PS2561-2

0 to 15˚

PS2561-1

4.6 ± 0.35

1.25±0.15

6.5

3.8M A X .

4.55M A X .2.8M I N .

0.65

0.50 ± 0.100.25M

0 to 15˚

7.62

2.54

43

121.25±0.15

PS2561L1-1

5.1 MAX.

6.5

3.8M A X .

4.25M A X .

2.8M I N .

0.35

2.54

7.62

0.50 ± 0.100.25M

0 to 15˚

43

121.25±0.15

10.161. Anode 2. Cathode 3. Emitter 4. Collector 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector

1. Anode

2. Cathode

3. Emitter

4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector Caution New package 1ch only

3

Lead Bending Type

5.1 MAX.

6.5

3.8M A X .

2.54

7.62

0.25M

43

12PS2561L-1 (New Package)

10.2 MAX.

1.25±0.156.5

3.8M A X .

2.54

7.62

871265

34PS2561L-2

PS2561L-1

4.6 ± 0.35

1.25±0.156.5

3.8M A X .

0.25M

7.62

2.54

43

121.25±0.150.05 t o 0.2

9.60 ± 0.4

0.90 ± 0.250.05 t o 0.2

9.60 ± 0.4

0.90 ± 0.250.25M

0.05 t o 0.2

9.60 ± 0.4

0.90 ± 0.255.1 MAX.

6.5

3.8M A X .

2.54

7.62

0.25M

PS2561L2-1

43

121.25±0.150.05 t o 0.2

10.160.9 ± 0.2512.0 MAX.

1. Anode

2. Cathode

3. Emitter

4. Collector

1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector 1. Anode 2. Cathode 3. Emitter 4. Collector Caution New package 1ch only

4

ORDERING INFORMATION

Part Number

Package

Safety Standard Approval

Application part

number *1

PS2561-1PS2561L-1PS2561L1-1PS2561L2-14-pin DIP

4-pin DIP (lead bending surface mount)4-pin DIP (for long distance)

4-pin DIP (for long distance surface

mount)Standard products PS2561-1

PS2561-2PS2561L-28-pin DIP

8-pin DIP (lead bending surface mount)PS2561-2

PS2561-1-V PS2561L-1-V PS2561L1-1-V PS2561L2-1-V 4-pin DIP

4-pin DIP (lead bending surface mount)4-pin DIP (for long distance)

4-pin DIP (for long distance surface

mount)VDE0884 approved products (Option)PS2561-1

PS2561-2-V PS2561L-2-V

8-pin DIP

8-pin DIP (lead bending surface mount)

PS2561-2

*1 As applying to Safety Standard, following part number should be used.

ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise specified)

Parameter

Symbol

Ratings

Unit

PS2561-1,PS2561L-1

PS2561-2,PS2561L-2Diode

Reverse Voltage V R 6V Forward Current (DC)I F

80

mA

Power Dissipation Derating ∆P D /°C 1.5 1.2mW/°C Power Dissipation P D 150

120

mW/ch Peak Forward Current

*1

I FP 1A Transistor

Collector to Emitter Voltage V CEO 80V Emitter to Collector Voltage V ECO 7V Collector Current

I C

50

mA/ch

Power Dissipation Derating ∆P C /°C 1.5 1.2mW/°C Power Dissipation

P C 150

120

mW/ch Isolation Voltage

*2

BV

5 000

3 750*3

Vr.m.s.Operating Ambient Temperature T A –55 to +100°C Storage Temperature

T stg

–55 to +150

°C

*1PW = 100 µs, Duty Cycle = 1 %

*2AC voltage for 1 minute at T A = 25 °C, RH = 60 % between input and output *3VDE0884 approved products (Option)

•UL approved •CSA approved •BSI approved

•NEMKO approved •DEMKO approved •SEMKO approved

•FIMKO approved

5

ELECTRICAL CHARACTERISTICS (T A = 25 °C)

Parameter

Symbol Conditions MIN.TYP.MAX.Unit Diode

Forward Voltage V F I F = 10 mA 1.17

1.4V

Reverse Current I R V R = 5 V

5

µA Terminal Capacitance

C t V = 0 V, f = 1.0 MHz 50

pF

Transistor

Collector to Emitter Dark Current

I CEO

V CE = 80 V, I F = 0 mA

100

nA

Coupled Current Transfer Ratio *1

CTR I F = 5 mA, V CE = 5 V 80200400%Collector Saturation Voltage

V CE (sat)

I F = 10 mA, I C = 2 mA

0.3

V Isolation Resistance R I-O V I-O = 1.0 kV 10

11

Ω

Isolation Capacitance C I-O V = 0 V, f = 1.0 MHz

0.5pF

Rise Time *2

t r V CC = 10 V, I C = 2 mA, R L = 100 Ω

3µs

Fall Time

*2

t f

5

*1CTR rank (only PS2561-1, PS2561L-1)

*2Test circuit for switching time

L

: 200 to 400 (%)

M : 80 to 240 (%)D : 100 to 300 (%)H : 80 to 160 (%)W : 130 to 260 (%)

V CC

V OUT

R L = 100 Ω

50 Ω

I F µPulse Input

PW = 100 s

Duty Cycle = 1/10

6

TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise specified)

150100

50

0255075100125150 1.5 mW/˚C

1.2 mW/˚C

150

100

50

255075100125150

010 000

100

1 000

100

10

175

50

25

–25

–50

V CE = 80 V

10 1.0

0.80.60.40.20

5

10.5

0.110 m A

40

1.5 mW/˚C

1.2 mW/˚C

20 m A 50 m A 2 m A

I F = 1 mA

5 m A 702605040302010

046810

20 m A I F = 5 mA

10

m A 5

0 m A 40 V 24 V 10 V 5 V

PS2561-1PS2561L-1

PS2561-2PS2561L-2

PS2561-1PS2561L-1

PS2561-2PS2561L-2

100 1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

50105

10.5

0.10 ˚C –25 ˚C –55 ˚C

+60 ˚C +25 ˚C

T A = +100 ˚C

D i o d e P o w e r D i s s i p a t i o n P D (m W )

T r a n s i s t o r P o w e r D i s s i p a t i o n P C (m W )

Ambient Temperature T A (˚C)

F o r w a r d C u r r e n t I F (m A )

Forward Voltage V F (V)C o l l e c t o r C u r r e n t I C (m A )

Collector to Emitter Voltage V CE (V)

C o l l e c t o r t o E m i t t e r

D a r k C u r r e n t I C

E O (n A )

Collector Saturation Voltage V CE(sat) (V)

Ambient Temperature T A (˚C)

Ambient Temperature T A (˚C)DIODE POWER DISSIPATION vs.AMBIENT TEMPERATURE

TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE

FORWARD CURRENT vs.FORWARD VOLTAGE

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

COLLECTOR TO EMITTER DARK

CURRENT vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT vs.

COLLECTOR SATURATION VOLTAGE

C o l l e c t o r C u r r e n t I C (m A )

7

PS2561-1,-2,PS2561L-1,-2

1.2

–50

1.00.8

0.60.40.20

–25

25

50

75

100

450400350300250200150100500

0.050.1

0.5

1

5

10

50

50

10

1

0.110 k

5 k 1 k

500100

5010

1 000

10010

1100 k

50 k 10 k

5 k 1 k

500100

0–5–10

–15–20

0.51

2

5

1020

50100200500I C = 2 mA,V CC = 10 V,CTR = 290 %

t f t r

t d

t s

I F = 5 mA,V CC = 5 V,CTR = 290 %

t s

t d

t r

t f

I F = 5 mA,V CE = 5 V

100 Ω

300 Ω

R L = 1 k Ω

I F = 5 mA T A = 25 ˚C

I F = 5 mA T A = 60 ˚C 1.2

1.00.80.60.40.2

102103

104105

Normalized to 1.0at T A = 25 ˚C,

I F = 5 mA, V CE = 5 V

Forward Current I F (mA)

Ambient Temperature T A (˚C)Load Resistance R L (Ω)Frequency f (kHz)

N o r m a l i z e d C u r r e n t T r a n s f e r R a t i o C T R

C u r r e n t T r a n s f e r R a t i o C T R (%)

N o r m a l i z e d G a i n G V

Load Resistance R L (Ω)

S w i t c h i n g T i m e t ( s )

µNORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE

CURRENT TRANSFER RATIO vs.FORWARD CURRENT

SWITCHING TIME vs.LOAD RESISTANCE

SWITCHING TIME vs.

LOAD RESISTANCE

FREQUENCY RESPONSE

LONG TIME CTR DEGRADATION

S w i t c h i n g T i m e t ( s )

µTYP.

Time (Hr)

C T R (R e l a t i v e V a l u e )

8

TAPING SPECIFICATIONS (in millimeters)

Taping Direction

PS2561L-1-E3PS2561L-1-F3

PS2561L-1-E4PS2561L-1-F4

Outline and Dimensions (Tape)

1.55±0.1

2.0±0.14.0±0.1

1.55±0.1

1.75±0.1

4.3±0.2

10.3±0.1

0.3

7.5±0.1

16.0±0.3

5.6±0.1

8.0±0.1

Outline and Dimensions (Reel)

Packing: PS2561L-1-E3, E4 1 000 pcs/reel

2.0±0.5

R 1.0

13.0±0.5

φ21.0±0.8

φ16.4+2.0–0.0

P S 2561L -1-E 3, E 4: 250P S 2561L -1-F 3, F 4: 330

φ80.0±5.0

φφPS2561L-1-F3, F4 2 000 pcs/reel

9

Taping Direction

PS2561L-2-E3PS2561L-2-E4

Outline and Dimensions (Tape)

1.55±0.1

2.0±0.14.0±0.1

1.55±0.1

1.75±0.1

4.3±0.2

10.3±0.10.3

7.5±0.1

16.0±0.3

10.4±0.1

12.0±0.1

Outline and Dimensions (Reel)

Packing: 1 000 pcs/reel

16.4+2.0–0.0

80.0±5.0

φ330

φ2.0±0.5

R 1.0

13.0±0.5

φ21.0±0.8

φ

10

RECOMMENDED SOLDERING CONDITIONS

(1) Infrared reflow soldering • Peak reflow temperature

235 °C (package surface temperature)• Time of temperature higher than 210 °C 30 seconds or less • Number of reflows Three

• Flux

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)

60 to 90 s (preheating)

210 ˚C

120 to 160 ˚C

P a c k a g e S u r f a c e T e m p e r a t u r e T (˚C )

Time (s)

(heating)to 10 s

to 30 s

235 ˚C (peak temperature)Recommended Temperature Profile of Infrared Reflow

Peak temperature 235 ˚C or below

Caution Please avoid to removed the residual flux by water after the first reflow processes.

(2) Dip soldering • Temperature 260 °C or below (molten solder temperature)• Time

10 seconds or less • Number of times One

• Flux

Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.)

11

SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)

Parameter

Symbol

Speck

Unit

Application classification (DIN VDE 0109)for rated line voltages ≤ 300 Vr.m.s.for rated line voltages ≤ 600 Vr.m.s.IV III Climatic test class (DIN IEC 68 Teil 1/09.80)

55/100/21Dielectric strength maximum operating isolation voltage

Test voltage (partial discharge test procedure a for type test and random test)U pr = 1.2 × U IORM , P d < 5 pC

U IORM U pr 01 068

V peak V peak

Test voltage (partial discharge test procedure b for random test)U pr = 1.6 × U IORM , P d < 5 pC U pr 1 424V peak

Highest permissible overvoltage U TR 6 000V peak

Degree of pollution (DIN VDE 0109)2Clearance distance > 7.0mm Creepage distance

> 7.0mm

Comparative tracking index (DIN IEC 112/VDE 0303 part 1)CTI 175Material group (DIN VDE 0109)III a Storage temperature range T stg –55 to +150°C Operating temperature range

T A –55 to +100

°C Isolation resistance, minimum value V IO = 500 V dc at T A = 25 °C

V IO = 500 V dc at T A MAX. at least 100 °C

Ris MIN.Ris MIN.1012

10

11ΩΩ

Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve)

Package temperature

Current (input current I F , Psi = 0)

Power (output or total power dissipation)Isolation resistance

V IO = 500 V dc at T A = 175 °C (Tsi)

Tsi Isi Psi Ris MIN.

175********

9

°C mA mW Ω

CAUTION

Within this device there exists GaAs (Gallium Arsenide) material which is a

harmful substance if ingested. Please do not under any circumstances break the

hermetic seal.

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.

NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.

While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.

NEC devices are classified into the following three quality grades:

"Standard

Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.

Anti-radioactive design is not implemented in this product.

M4 96. 5