TLP521_1

TOSHIBA Photocoupler GaAs Ired & Photo −Transistor

TLP521−1,TLP521−2,TLP521−4

Programmable Controllers AC/DC −Input Module Solid State Relay

The TOSHIBA TLP521−1, −2 and −4 consist of a photo −transistor optically coupled to a gallium arsenide infrared emitting diode.

The TLP521−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521−4 provides four isolated channels in a sixteen plastic DIP package.

• Collector −emitter voltage: 55 V (min) • Current transfer ratio: 50% (min)

Rank GB: 100% (min)

• Isolation voltage: 2500 Vrms (min) • UL recognized

made in Japan: UL1577, file No. E67349 made in Thailand: UL1577, file No. E152349

Pin Configurations (top view)

1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector

11, 3, 5, 7

2, 4, 6, 8

9, 11, 13, 15 10, 12, 14, 16: Anode : Cathode : Emitter : Collector

568

9

12

341

1 : Anode

2 : Cathode

3 : Emitter

4 : Collector

TOSHIBA 11−5B2 Weight: 0.26 g

TOSHIBA 11−10C4 Weight: 0.54 g

TOSHIBA 11−20A3 Weight: 1.1 g

Unit in mm

Absolute Maximum Ratings (Ta = 25°C)

Rating

Characteristic Symbol

TLP521−1

TLP521−2 TLP521−4

Unit

Forward current I F 70 50 mA

Forward current derating ΔI F /°C

−0.93 (Ta ≥ 50°C)

−0.5 (Ta ≥ 25°C)

mA /°C Pulse forward current I FP 1 (100μ pulse, 100pps)

A

Reverse voltage V R 5 V L E D

Junction temperature T j 125 °C Collector −emitter voltage V CEO 55 V Emitter −collector voltage V ECO 7 V Collector current

I C 50 mA Collector power dissipation (1 circuit)

P C 150 100 mW Collector power dissipation derating (1 circuit Ta ≥ 25°C) ΔP C /°C

−1.5

−1.0 mW /°C

D e t e c t o r

Junction temperature T j 125 °C Storage temperature range T stg −55~125 °C Operating temperature range T opr −55~100 °C Lead soldering temperature T sol

260 (10 s)

°C

Total package power dissipation P T 250 150 mW Total package power dissipation derating (Ta ≥ 25°C) ΔP T /°C −2.5

−1.5 mW /°C

Isolation voltage

BV S

2500 (AC, 1min., R.H.≤ 60%) (Note 1)

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted

together.

Recommended Operating Conditions

Characteristic Symbol Min Typ.Max

Unit

Supply voltage V CC ―

5 24 V

Forward current I F ― 16 25 mA Collector current I C ― 1 10 mA Operating temperature

T opr

−25

―

85 °C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.

Current Transfer Ratio (%)

(I C / I F )

I F = 5mA, V CE = 5V, Ta = 25°C

Type

Classi − fication (*1)

Min Max Marking Of Classification

A 50 600 Blank, Y, Y ■

, G, G ■

, B, B ■

, GB Rank Y

50 150 Y, Y ■

Rank GR 100 300 G, G ■ Rank BL 200 600 B, B ■

TLP521

Rank GB

100 600 G, G ■

, B, B ■

, GB A 50 600 Blank, GR, BL, GB TLP521−2 TLP521−4

Rank GB

100

600

GR, BL, GB

*1: Ex. rank GB: TLP521−1 (GB)

(Note): Application type name for certification test, please use standard product type name, i.e. TLP521−1 (GB): TLP521−1, TLP521−2 (GB): TLP521−2

Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition

Min Typ. Max Unit Forward voltage V F I F = 10 mA 1.0 1.15 1.3 V Reverse current

I R

V R = 5 V — — 10 μA L E D

Capacitance C T V = 0, f = 1 MHz — 30 — pF Collector −emitter

breakdown voltage V (BR) CEO I C = 0.5 mA 55 — — V Emitter −collector breakdown voltage V (BR) ECO I E = 0.1 mA 7 — — V V CE = 24 V

— 10 100nA Collector dark current I CEO V CE = 24 V, Ta = 85°C — 2 50 μA D e t e c t o r

Capacitance

(collector to emitter)

C CE

V = 0, f = 1 MHz

—

10

—

pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn Typ. Max Unit

50 — 600Current transfer ratio

I C / I F

I F = 5 mA, V CE = 5 V

Rank GB 100 — 600%

— 60 — Saturated CTR

I C / I F (sat)

IF = 1 mA, V CE = 0.4 V

Rank GB 30 — — % I C = 2.4 mA, I F = 8 mA

—

—

0.4

— 0.2 — Collector −emitter saturation voltage

V CE (sat)

I C = 0.2 mA, I F = 1 mA

Rank GB

— — 0.4

V

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition

Min Typ. Max Unit Capacitance

(input to output) C S V S = 0, f = 1 MHz — 0.8 — pF Isolation resistance

R S

V S = 500 V, R.H.≤ 60% —

10

11

— Ω AC, 1 minute

2500 — — AC, 1 second, in oil — 5000 — Vrms Isolation voltage

BV S

DC, 1 minute, in oil

—

5000

—

Vdc

Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition

Min

Typ.

Max

Unit

Rise time t r — 2 — Fall time t f

— 3 —

Turn −on time t on — 3 — Turn −off time t off V CC = 10 V I C = 2 mA R L = 100Ω

— 3 — μ

s

Turn −on time t ON — 2 — Storage time t s — 15 — Turn −off time

t OFF

R L = 1.9 k Ω (Fig.1)

V CC = 5 V, I F = 16 mA — 25 —

μs

V CC

V CC V CE

Fig.1 : SWITCHING TIME TEST CIRCUIT

I F

Ambient temperature Ta (°C) I F – Ta

A l l o w a b l e f o r w a r d c u r r e n t I F (m A )

100

80 -20

0 60

40 20 100

80

60

20 40 0

TLP521-1

Ambient temperature Ta (°C)

A l l o w a b l e f o r w a r d c u r r e n t I F (m A )

Ambient temperature Ta (°C)

P C – Ta

A l l o w a b l e c o l l e c t o r p o w e r d i s s i p a t i o n P C (m W )

240

160

-20

0 120

80

40

100

80 60 20 40 0 200

TLP521-1

A l l o w a b l e p u l s e f o r w a r d c u r r e n t I F P (m A )

Duty cycle ratio D R

A l l o w a b l e c o l l e c t o r p o w e r d i s s i p a t i o n P C (m W )

Ambient temperature Ta (°C)

A l l o w a b l e p u l s e f o r w a r d c u r r e n t I F P (m A )

Duty cycle ratio D R

Forward voltage V F (V)

I

– V

F o r w a r d c u r r e n t I F (m A )

0.4

0.6 1.2 1.6 F o r w a r d v o l t a g e t e m p e r a t u r e c o e f f i c i e n t ΔV F /ΔT a (m V /°C )

ΔV F /ΔTa – I F

Forward current I F (mA)

0.1

-2.0

-2.4

-2.8

-0.4 0.3

-1.6

-1.2

-0.8 1 3 10 30

I

– V

P u l s e f o r w a r d c u r r e n t I F P (m A )

Pulse forward voltage V FP (V)

I – Ta

Ambient temperature Ta (℃)

101010120 80 40 0

101010C o l l e c t o r d a r k c u r r e n t I C E O (μ

A )

Collector-emitter voltage V CE (V)

C o l l e c t o r c u r r e n t I C (m A )

I – V

Collector-emitter voltage V CE (V) C o l l e c t o r c u r r e n t I C (m A )

I C – V CE

Ambient temperature Ta (℃)

C o l l e c t o r c u r r e n t I C (m A )

I C – Ta

C u r r e n t t r a n s f e r r a t i o I C /I F (%)

Forward current I F (mA)

Ambient temperature Ta (℃)

C o l l e c t o r -e m i t t e r s a t u r a t i o n

v o l t a g e V C E (s a t ) (V )

V – Ta

C o l l e c t o r c u r r e n t I C (m A )

Forward current I F (mA)

0.3

1

3

10 30 100

R – Switching Time

S w i t c h i n g t i m e (μs )

Load resistance R L (k Ω)

20070701-EN •The information contained herein is subject to change without notice.

•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.

•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.

•GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically.

• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.