CR03高压灵敏触发单向可控硅晶闸管

PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

DESCRIPTION

FEATURES

•Sensitive gate allows triggering by micro controllers and other logic circuits •Blocking voltage to 800V

•On-state current rating of 1.2A RMS at 80°C •High surge current capability –12A

•Minimum and maximum values of IGT, VGT and IH specified for ease of design •Immunity to dV/dt –20V/μsec minimum at 110°C

•Glass-passivated surface for reliability and uniformity

ABSOLUTE MAXIMUM RATINGS ()

T = 25°C UNLESS OTHERWISE SPECIFIED J THERMAL RESISTANCES

SILICON CONTROLLED RECTIFIERS

Symbol Parameter

Condition Ratings Units V DRM Repetitive Peak Off -State Voltage 800

V I T (AV)Average On-State Current Half SineWave :T C =74°C 1.0A I T (RMS)R.M.SOn-State Current All Conduction Angle

1.2A I TSM Surge On-State Current

1/2Cycle,60Hz,Sine Wave Non -Repetitive

10A I 2t I t for Fusing

t =8.3ms

0.72A2s P GM Forward Peak Gate Power Dissipation 0.5W P G (AV)Forward Average Gate Power Dissipation

0.1W I FGM ForwardPeak Gate Current 1A V RGM Reverse Peak Gate Voltage 5V T J Operating Junction Temperature

-40~150°C T STG

Storage Temperature

-40~150

°C

2

Symbol Parameter

Value Unit Rth(j-c)Junction to Case TO-9270°C/W Rth(j-a)

Junction to Ambient

TO-92

180

°C/W

ELECTRICAL CHARACTERISTICS ( TC = 25 °C UNLESS OTHERWISE NOTED )

Notes:

1.Pulse Width 1.0ms ,Duty cycle 1%

2. Does not include RGKin measurement

≤≤VOLTAGE CURRENT CHARACTERISTIC OF SCR

Symbol

Items

Conditions

Ratings

Unit

Min.Typ.Max.I DRM Repetitive Peak Off-State Current

V AK =V DRM or V RRM ;R GK =1000ohm T C =25°C

T C =125°C

────10200uA V TM Peak On-State Voltage (1)(I TM =1A,Peak )

─ 1.2 1.7V

I GT Gate Trigger Current(2)V AK =6V,R =100ohm L ,T C =25°C,

T C =-40°C ──200uA ──500V GT Gate Trigger Voltage (2)V D =7V,R =100ohm L ,T C =25°C,

T C =-40°C ──0.8V ── 1.2V GD Non-Trigger Gate Voltage (1)V AK =12V,R =100ohm,L T C =125°C 0.2──V dv/dt Critical Rate of RiseOff-State Voltage V D =Rated V DRM ,Exponential wave form,

R GK =1ohm,000T J =125°C 2035─V/uS di/dt Critical Rate of RiseOff-State Voltage

I PK =20A ;;di/dt=1A/uS Igt =20mA

──50A/uS I H

Holding Current

V AK =12V,Gate OpenInitiating Curent=20mA T C =25°C

T C =-40°C

──

2─

5.010

mA

SEMIWILL

PACKAGE MECHANICAL DATA