af4502c

P & N-Channel 30-V (D-S) MOSFET

Features

-Low r DS(on) Provides Higher Efficiency and Extends Battery Life

-Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applications

Product Summary

V DS (V) r DS(on) (m Ω) I D (A) 20@V GS =4.5V

8.4 30 13.5@V

GS =10V 10.0 30@V GS =-4.5V -6.8 -30

19@V GS =-10V

-8.5

Pin Assignments

SOP-8

D1D1D2D2

S1G1S2G2

General Description

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers,

printers, battery charger, telecommunication power system, and telephones power system.

Pin Descriptions

Pin Name

Description

S1 Source (NMOS)

G1 Gate (NMOS) D1 Drain (NMOS) S2 Source (PMOS) G2 Gate (PMOS) D2 Drain (PMOS)

Ordering information

F :MOSFET

S: SOP-8

Blank : Normal

L : Lead Free Package

Blank : Tube or Bulk A : Tape & Reel

P & N-Channel 30-V (D-S) MOSFET

Absolute Maximum Ratings (T A =25ºC unless otherwise noted)

Symbol Parameter N-Channel P-Channel Units V DS Drain-Source Voltage 30 -30 V GS Gate-Source Voltage 20 -25 V

T A =

25ºC 10 -8.5

I D Continuous Drain Current (Note 1) T A =70ºC

8.1 -6.8 A I DM Pulsed Drain Current (Note 2) ±50 ±50 A I S Continuous Source Current (Diode Conduction) (Note 1) 2.3 -2.1 A

T A =25ºC 2.1 2.1

P D Power Dissipation (Note 1) T A =70ºC 1.3 1.3

W

T J , T STG Operating Junction and Storage Temperature Range - -55 to 150 ºC

Thermal Resistance Ratings

Symbol Parameter Maximum

Units R θJC Maximum Junction-to-Case (Note 1) t < 5 sec 40 ºC/W R θJA Maximum Junction-to-Ambient (Note 1) t < 5 sec

60 ºC/W

Note 1: surface Mounted on 1”x 1” FR4 Board.

Note 2: Pulse width limited by maximum junction temperature

Specifications (T A =25ºC unless otherwise noted)

Limits Symbol Parameter Test Conditions

Ch

Min.Typ.

Max.

Unit

Static

V GS =0V, I D =

250uA N 30 - -

V (BR)DSS Drain-Source breakdown Voltage V GS =0V, I D =-250uA P

-30 - - V

V DS = V GS , I D =250uA N 1 1.95 3

V GS(th) Gate-Threshold Voltage V DS = V GS , I D =

-250uA

P -1.0-1.6 -3 V

V GS =20V, V DS =0V N - - ±100

I GSS Gate-Body Leakage V GS =-20V, V DS =

0V P - -

±100nA

V DS =24V, V GS =0V N - - 1

I DSS

Zero Gate Voltage Drain Current

V DS =-24V, V GS =0V P - - -1 uA

V DS =5V, V GS =

10V N 20 - -

I D(on) On-State Drain Current (Note 3)

V DS =-5V, V GS =

-10V P -50 - - A

V GS =10V, I D =

10A - 11 13.5

V GS =4.5V, I D =8.4A N

- 15 20

V GS =-10V, I D =-8.5A - 16 19

r DS(on)

Drain-Source On-Resistance

(Note 3)

V GS =-4.5V, I D =-6.8A P

- 26 30 m Ω

V DS =15V, I D =

10A N - 40 -

g fs

Forward Tranconductance

(Note 3)

V DS =-15V, I D =-9.5A P - 31 -

S

P & N-Channel 30-V (D-S) MOSFET

Specifications (T A =25ºC unless otherwise noted)

Limits Symbol Parameter

Test Conditions

Ch

Min.Typ.

Max.

Unit

Dynamic

N - 12 19 Q g Total Gate Charge P - 13 26 N - 3.3 -

Q gs Gate-Source Charge P - 5.8 - N - 4.5 - Q gd Gate-Drain Charge N-Channel

V DS =15V, V GS =4.5V I D =10A P-Channel

V DS =-15V, V GS =-4.5V I D =-10A

P - 12 -

nC

Switching N - 20 30 t d(on)

Turn-On Delay Time

P - 15 26 N - 9 20 t r Rise Time P - 16 21

N - 70 102 t d(off) Turn-Off Delay Time P - 62 108 N - 20 81 t f Fall-Time

N-Channel

V DD =15, V GS =10V I D =1A, R GEN =25Ω P-Channel

V DD =-15, V GS =-10V I D =-1A, R GEN =15Ω

P 46 71

nS

Note 3: Pulse test: PW < 300us duty cycle < 2%.

Note 4: Guaranteed by design, not subject to production testing.

P & N-Channel 30-V (D-S) MOSFET

Typical Performance Characteristics

P & N-Channel 30-V (D-S) MOSFET

Typical Performance Characteristics (Continued)

P & N-Channel 30-V (D-S) MOSFET

Typical Performance Characteristics (Continued)

P & N-Channel 30-V (D-S) MOSFET

Typical Performance Characteristics (Continued)

P & N-Channel 30-V (D-S) MOSFET

Marking Information

SOP-8L

( Top View )

4 5 0 2 C

AA Y W "A~Z": 27~52~

"A~Z": 27~52"X": Lead Free

Package Information Package Type: SOP-8L

Dimensions In Millimeters Dimensions In Inches

Symbol

Min. Nom. Max. Min. Nom. Max.

A 1.40 1.60 1.75 0.055 0.063 0.069 A1 0.10 - 0.25 0.040 - 0.100 A2 1.30 1.45 1.50 0.051 0.057 0.059

B 0.33 0.41 0.51 0.013 0.016 0.020

C 0.19 0.20 0.25 0.0075 0.008 0.010

D 4.80 5.05 5.30 0.1 0.199 0.209

E 3.70 3.90 4.10 0.146 0.154 0.161 e - 1.27 - - 0.050 - H 5.79 5.99 6.20 0.228 0.236 0.244 L 0.38 0.71 1.27 0.015 0.028 0.050 y - - 0.10 - - 0.004

θ

0O - 8O 0O - 8O