2sd2150

Rev.A 1/3

Low Frequency Transistor (20V, 3A)

2SD2150

z Features 1) Low V CE(sat).

V CE(sat) = 0.2V(Typ.) （I C / I B = 2A / 0.1A ）

2) Excellent current gain characteristics. 3) Complements the 2SB1424.

z Structure

Epitaxial planar type NPN silicon transistor

z External dimensions (Unit : mm)

Denotes h FE

z Absolute maximum ratings (T a=25°C)

Parameter

V CBO V CEO V EBO I C

P C Tj Tstg

40V V V A (DC)W W

°C °C

2063 A (Pulse)

50.52∗1∗2

150−55 to +150

Symbol Limits Unit ∗1 Single pulse Pw =10ms

∗2 Mounted on a 40×40×0.7mm Ceramic substrate.

Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current

Collector power dissipation Junction temperature Storage temperature

Transistors

Rev.A 2/3

z Electrical characteristics (T a=25°C)

Parameter

Symbol BV CBO BV CEO BV EBO I CBO I EBO h FE V CE(sat)f T Cob

Min.40206−−120−−−

−−−−−−0.229025

−−−0.10.15600.5−−

V I C =50µA I C =1mA I E =50µA V CB =30V V EB =5V

V CE =2V, I C =0.1A

I C /I B =2A/0.1A V CE =2V, I E = −0.5A, f =100MHz V CE =10V, I E =0A, f =1MHz

V V

µA µA −V ∗

MHz pF

Typ.Max.Unit Conditions

∗ Measured using pulse current.

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current

DC current transfer ratio Collector-emitter saturation voltage

Transition frequency Output capacitance

z Packaging specifications and h FE

Package Code

T1001000

Taping Basic ordering unit (pieces)

RS

h FE 2SD2150

Type

h FE values are classified as follows :

Item h FE

R 180 to 390

S 270 to 560

z Electrical characteristic curves

C O L L E C T O R C U R R E N T : I C (A )

BASE TO EMITTER VOLTAGE : V BE (V)Fig.1 Grounded emitter propagation

characteristics

C O L L E C T O R C U R R E N T : I C

(A )

COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.2 Grounded emitter output

characteristics ( ) C O L L E C T O R C U R R E N T : I C (A )

COLLECTOR TO EMITTER VOLTAGE : V CE (V)

Fig.3 Grounded emitter output

characteristics ( )

Transistors

Rev.A 3/3

D C C U R R

E N T G A I N : h

F E

COLLECTOR CURRENT : I C (A)

Fig.4 DC current gain vs.

collector current

C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )

COLLECTOR CURRENT : I C (A)

Fig.6 Collector-emitter

saturation voltage vs.collector curren ( )

C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )

COLLECTOR CURRENT : I C (A)

Fig.5 Collector-emitter

saturation voltage vs. collector current ( )

C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (p F )

COLLECTOR TO BASE VOLTAGE : V CB (V)EMITTER TO BASE VOLTAGE : V EB (V)

Fig.9 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (

s a t ) (V )

COLLECTOR CURRENT : I C (A)

Fig.7 Collector-emitter

saturation voltage vs.collector current ( )

T R A N S I T I O N F R E Q U E N C Y : f T (M H z )

EMITTER CURRENT : I E (mA)

Fig.8 Gain bandwidth product vs.

emitter current

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1