pm100cl1a120_e

FLAT-BASE TYPE

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Parameter

Symbol

Supply Voltage Protected by

SC

Supply Voltage (Surge)

Storage Temperature Isolation Voltage Condition

V CC(surge)T stg

V iso Ratings V CC(PROT)

8001000–40 ~ +1252500

Unit V °C V rms

V V D = 13.5 ~ 16.5V

Inverter Part, T j = +125°C Start Applied between : P-N, Surge value

60Hz, Sinusoidal, Charged part to Base, AC 1 min.

TOTAL SYSTEM

0.190.310.023

°C/W

R th(j-c)Q R th(j-c)F R th(c-f)

Inverter IGBT part (per 1 element) (Note-1)Inverter FWDi part (per 1 element) (Note-1)Case to fin, (per 1 module)Thermal grease applied

(Note-1)

Symbol Condition

Unit

Min.———

———

Junction to case Thermal Resistances

THERMAL RESISTANCES

Contact Thermal Resistance

(Note-1) T C (under the chip) measurement point is below.

Parameter

Limits Typ.Max.UP

IGBT 24.5

57.0

VP

WP

UN

VN

WN

FWDi

24.546.6IGBT 58.0

57.0

FWDi

58.046.6IGBT 88.0

57.0

FWDi

88.046.6IGBT 39.0

28.4

FWDi

39.038.8IGBT 72.5

28.4

FWDi

72.538.8IGBT 102.528.4

FWDi 102.5

38.8arm

axis

X Y

(unit : mm) 2.152.353.32.00.81.02.81.2110

Min.Typ.Max.Collector-Emitter Saturation Voltage

Collector-Emitter Cutoff Current

–I C = 100A, V D = 15V, V CIN = 15V (Fig. 2)

T j = 25°C T j = 125°C

ELECTRICAL CHARACTERISTICS (T j = 25°C, unless otherwise noted)

INVERTER PART

Parameter

Symbol Condition

V CE(sat)I CES

V EC t on t rr t c(on)t off t c(off)Limits ———0.3——————

1.651.85

2.30.80.30.41.20.4——

T j = 25°C T j = 125°C

FWDi Forward Voltage

Switching Time

V D = 15V, V CIN = 0V ↔15V V CC = 600V, I C = 100A T j = 125°C Inductive Load (Fig. 3,4)V CE = V CES , V D = 15V

(Fig. 5)

V D = 15V, I C = 100A V CIN = 0V, Pulsed (Fig. 1)V mA

V

µs

Unit Bottom view

Y

X

* If you use this value, R th(f-a) should be measured just under the chips.

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