SS8050长电科技CJ直插三极管TO-90封装规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors

SS8050 TRANSISTOR (NPN )

FEATURES

Power dissipation

P CM : 1 W (T A =25℃) : 2 W (T C =25℃)

MAXIMUM RATINGS (T A =25℃ unless otherwise noted)

Symbol Parameter Value Units V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 25 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 1.5 A T j Junction Temperature 150 ℃ T stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage V (BR)CBO I C =100uA, I E =0 40 V

Collector-emitter breakdown voltage V (BR)CEO I C =0.1mA, I B =0 25 V

Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5

V Collector cut-off current I CBO V CB =40V, I E =

0 0.1 μA Emitter cut-off current I CEO V CE =20V, I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V, I C =

0 0.1 μA h FE(1) V CE =1V, I C =100mA 85 400 DC current gain

h FE(2) V CE =1V, I C =800mA

40

Collector-emitter saturation voltage V CE(sat) I C =800mA, I B =

80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B =

80mA 1.2 V

Base-emitter voltage V BE V CE =1V, I C =

10mA 1 V Transition frequency f T

V CE =10V, I C =50mA,f=30MH Z 100

MHz

CLASSIFICATION OF h FE(1)

Rank B C D D3

Range

85-160 120-200 160-300 300-400

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

A,Apr ,2011

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A,Apr,2011 www.nscn.com.cn