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MBRM120E

来源:动视网 责编:小OO 时间:2025-09-28 00:30:22
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MBRM120E

MBRM120ESurfaceMountSchottkyPowerRectifierPOWERMITE®PowerSurfaceMountPackageTheSchottkyPowermiteemploystheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop–reversecurrenttradeoff.Theadvancedpackag
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导读MBRM120ESurfaceMountSchottkyPowerRectifierPOWERMITE®PowerSurfaceMountPackageTheSchottkyPowermiteemploystheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop–reversecurrenttradeoff.Theadvancedpackag
MBRM120E

Surface Mount

Schottky Power Rectifier POWERMITE®

Power Surface Mount Package

The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal

forward voltage drop–reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.

Features:

•Low Profile – Maximum Height of 1.1 mm

•Small Footprint – Footprint Area of 8.45 mm2

•Low V F Provides Higher Efficiency and Extends Battery Life •Supplied in 12 mm Tape and Reel

•Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink

Mechanical Characteristics:

•Powermite is JEDEC Registered as DO–216AA

•Case: Molded Epoxy

•Epoxy Meets UL94V–0 at 1/8″

•Weight: 62 mg (approximately)

•Device Marking: BCV

•Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds

MAXIMUM RATINGS

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES

20 VOLTS

http://onsemi.com

Device Package Shipping

ORDERING INFORMATION

MBRM120ET1POWERMITE3000/T ape & Reel

POWERMITE

CASE 457

PLASTIC

ANODE

MARKING DIAGRAM

BCV= Device Code

M= Date Code

M

BCV

MBRM120ET3POWERMITE12,000/T ape & ReelMAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

V R , REVERSE VOLTAGE (VOLTS)

I

I R , R E V E R S E C U R R E N T (A M P S )

P S )

i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

10

1.0

20

V R , REVERSE VOLTAGE (VOLTS)0.1

5.0

101520

5.0

10

15

P F O , A V E R A G E D I S S I P A T I O N (W A T T S )

I O , A V E R A G E F O R W A R D C U R R E N T (A M P S )

Figure 5. Current Derating Figure 6. Forward Power Dissipation

45

85

25

T L , LEAD TEMPERATURE (°C)1.81.21.00.80.20I O , AVERAGE FORWARD CURRENT (AMPS)

0.2

0.70.6

0.5

0.30.10 1.0

65

105

1451251.40.4

0.8

1.2

1.6

0.4

1651.60.60.40.6

1.40.2T J ,

C , C A P A C I T A N C E (p F )

Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*

12

V R , REVERSE VOLTAGE (VOLTS)

1000100

10

V R , DC REVERSE VOLTAGE (VOLTS)

6.0

20

6.0

2.0

4.0

8.0

10

8.0

10

2.0

4.0

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-verse voltage conditions. Calculations of T J therefore must include forward and reverse power effects. The allowable operating T J may be calculated from the equation:T J = T Jmax – r(t)(Pf + Pr) where

r(t) = thermal impedance under given conditions,Pf = forward power dissipation, and Pr = reverse power dissipation

This graph displays the derated allowable T J due to reverse bias under DC conditions only and is calculated as T J = T Jmax – r(t)Pr,where r(t) = Rthja. For other power applications further calculations must be performed.

20

18

12

14

16

14

16

18

R (T ), T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )

T, TIME (s)

1.0

0.1

0.01

0.001

1000.1

0.00001

1,000

0.00010.0010.01 1.010

Figure 9. Thermal Response Junction to Lead

100

0.10.00001

T, TIME (s)

0.00010.0010.01 1.010

Figure 10. Thermal Response Junction to Ambient

R (T ), T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )

Minimum Recommended Footprint

PACKAGE DIMENSIONS

POWERMITE PLASTIC PACKAGE CASE 457–04ISSUE D

DIM MIN MAX MIN MAX INCHES MILLIMETERS A 1.75 2.050.0690.081B 1.75 2.180.0690.086C 0.85 1.150.0330.045D 0.400.690.0160.027F 0.70 1.000.0280.039H -0.05+0.10-0.002+0.004J 0.100.250.0040.010K 3.60 3.900.1420.154L 0.500.800.0200.031R 1.20 1.500.0470.059S

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198

2.

2.CONTROLLING DIMENSION: MILLIMETER.

3.DIMENSION A DOES NOT INCLUDE MOLD FLASH,PROTRUSIONS OR GATE BURRS. MOLD FLASH,PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.

0.50 REF 0.019 REF

Notes

http://onsemi.com

7POWERMITE is a registered trademark of and used under a license from MicroSemi Corporation.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

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MBRM120E

MBRM120ESurfaceMountSchottkyPowerRectifierPOWERMITE®PowerSurfaceMountPackageTheSchottkyPowermiteemploystheSchottkyBarrierprinciplewithabarriermetalandepitaxialconstructionthatproducesoptimalforwardvoltagedrop–reversecurrenttradeoff.Theadvancedpackag
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