IC datasheet pdf-REF1112,pdf(10ppm_°C, 1μA, 1.25V

REF1112

SBOS283C – SEPTEMBER 2003 – REVISED MARCH 2008

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FEATURES

q MICRO-PACKAGE: SOT23-3

q WIDE CURRENT RANGE: 1µA to 5mA q HIGH INITIAL ACCURACY: 0.2%q

EXCELLENT SPECIFIED DRIFT PERFORMANCE:

30ppm/°C (max) from 0°C to +70°C 50ppm/°C (max) from –40°C to +85°C

PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Copyright © 2003-2008, Texas Instruments Incorporated

10ppm/°C, 1µA, 1.25V

SHUNT VOLTAGE REFERENCE

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

APPLICATIONS

q BATTERY-POWERED INSTRUMENTS q PORTABLE DEVICES q MEDICAL EQUIPMENT q CURRENT SOURCES q CALIBRATORS

q

MICROPOWER CURRENT AND VOLTAGE REFERENCE

DESCRIPTION

The REF1112 is a two-terminal shunt reference designed for power- and space-sensitive applications. The REF1112features an operating current of 1mA in a SOT23-3 package and is an improved, lower power solution for designs currently using voltage references in larger packages, such as the REF1004 and LT1004. The REF1112 is specified from –40°C to +85°C with operation extending from –40°C to +125°C.

The REF1112 complements other 1µA components from Texas Instruments including the OPA349 and the TLV240x low-power operational amplifiers, and the TLV349x micropower voltage comparator.

NC

SOT23

GND V O

NC indicates pin should be left unconnected.

V OUT

I REF + I LOAD

I REF

R LOAD

R BIAS = V S − V D I LOAD + I

REF

REF1112

2

SBOS283C

www.ti.com

REVERSE BREAKDOWN VOLTAGE

I REF = 1.2µA

1.2475 1.25

1.2525V –0.2

+0.2

%

TEMPERATURE COEFFICIENT

1.2µA ≤ I REF ≤ 5mA, 0°C to +70°C 1030ppm/°C 1.5µA ≤ I REF ≤ 5mA, –40°C to +85°C 1550ppm/°C 1.5µA ≤ I REF ≤ 5mA, –40°C to +125°C

15ppm/°C MINIMUM OPERATING CURRENT 1 1.2µA REVERSE BREAKDOWN VOLTAGE 30

100

ppm/mA

CHANGE WITH CURRENT 1.2µA ≤ I REF ≤ 5mA REVERSE DYNAMIC IMPEDANCE

1.2µA ≤ I REF ≤ 5mA

0.0370.125

ΩLOW-FREQUENCY NOISE (1)

0.1Hz ≤ I REF ≤ 10Hz 25µV PP THERMAL HYSTERESIS (2)100

ppm

LONG-TERM STABILITY

+25°C ± 0.1°C

60

ppm/kHr TEMPERATURE CHARACTERISTICS Specified Range –40+125°C Operating Range –40+125°C Storage Range

–40

+150

°C Thermal Resistance

θJA

SOT23-3 Surface-Mount

135

°C/W

(1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole, low-pass Chebyshev filter at 10Hz.

(2) Thermal hysteresis is defined as the change in output voltage after operating the device at +25°C, cycling the device through the specified temperature range,

and returning to +25°C.

Reverse Breakdown Current ............................................................10mA Forward Current................................................................................10mA Operating Temperature ..................................................–55°C to +125°C Storage Temperature......................................................–65°C to +150°C Junction Temperature ....................................................................+150°C (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.

ABSOLUTE MAXIMUM RATINGS (1)

ELECTROSTATIC

DISCHARGE SENSITIVITY

Electrostatic discharge can cause damage ranging from performance degradation to complete device failure. Texas Instruments recommends that all integrated circuits be handled and stored using appropriate ESD protection methods.ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet published speci-fications.

PACKAGE/ORDERING INFORMATION (1)

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com.

SPECIFIED PACKAGE TEMPERATURE

PACKAGE ORDERING TRANSPORT PRODUCT PACKAGE-LEAD

DESIGNATOR

RANGE MARKING NUMBER MEDIA, QUANTITY REF1112

SOT23-3

DBZ

–40°C to +125°C

R11A

REF1112AIDBZT Tape and Reel, 250"""""

REF1112AIDBZR

Tape and Reel, 3000

ELECTRICAL CHARACTERISTICS

Boldface limits apply over the specified temperature range, T A = –40°C to +125°C.

At T A = +25°C, I REF = 1.2µA and C LOAD = 10nF, unless otherwise noted.

REF1112 - 1.25V

PARAMETER

CONDITIONS MIN

TYP

MAX

UNITS

REF1112

3

SBOS283C

www.ti.com

TYPICAL CHARACTERISTICS

At T A = +25°C, I REF = 10µA and C LOAD = 10nF, unless otherwise noted.

REVERSE CHARACTERISTICS

Reverse Voltage (V)

R e v e r s e C u r r e n t (µA )

0.750.500.25 1.00 1.25 1.50

0.00

1001010.10.01

1K 10K

FORWARD CHARACTERISTICS

F o r w a r d V o l t a g e (V )

Forward Current (mA)

1.0

0.10.01

10

0.0011.0

0.8

0.60.40.20.0

TEMPERATURE DRIFT

Temperature (°C)

R e v e r s e V o l t a g e (V )

5−

15−35254565−55

85105125

1.255

1.254

1.2531.2521.2511.2501.2491.248

REVERSE VOLTAGE CHANGE vs CURRENT

Reverse Current (mA)

O u t p u t V o l t a g e C h a n g e

(m V )

0.0010.5

0.01

0.1

110

0.4

0.3

0.2

0.10.0

REVERSE DYNAMIC IMPEDANCE

Reverse Current (mA)

D y n a m i c I m p e d a n c e (Ω)

0.1

0.01

0.001

1

10

0.1

0.01

1

10

100

REVERSE DYNAMIC IMPEDANCE

Frequency (Hz)

D y n a m i c I m p e d a n c e (Ω)

10010

11k 10k 0.10.01

1101001k

10k

100k

REF1112

4

SBOS283C

www.ti.com

TYPICAL CHARACTERISTICS (Continued)

At T A = +25°C, I REF = 10µA and C LOAD = 10nF, unless otherwise noted.

REVERSE BREAKDOWN VOLTAGE DISTRIBUTION

Reverse Breakdown Voltage (V)

25

20

15

10

5

D i s t r i b u t i o n (%)

TEMPERATURE DRIFT DISTRIBUTION

Drift (ppm/°C)

50

40

30

20

10

D i s t r i b u t i o n (%)

Drift (ppm/°C)

TEMPERATURE DRIFT DISTRIBUTION

25

20

15

10

5

D i s t r i b u t i o n (%)

LOW-FREQUENCY NOISE, 0.1 to 10Hz

1.0s/div

10µV /d i v

RESPONSE TIME

10ms/div V o l t a g e (V )

2V 1V

0V

5V

0V

RESPONSE TIME

25ms/div

V o l t a g e (V )

2V 1V

0V

5V

0V

REF1112

5

SBOS283C

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APPLICATIONS INFORMATION

The REF1112 is a two-terminal bandgap reference diode designed for high accuracy with outstanding temperature characteristics at low operating currents. Precision thin-film resistors result in 0.2% initial voltage accuracy and 50ppm/°C maximum temperature drift. The REF1112 is specified from –40°C to +85°C, with operation from –40°C to +125°C, and is offered in a SOT23-3 package.

Typical connections for the REF1112 are shown in Figure 1.A minimum 1µA bias current is required to maintain a stable output voltage and can be provided with a resistor con-nected to the supply voltage. I BIAS depends on the values selected for R BIAS and V S , and will vary as a sum of the minimum operating current and the load current. To main-tain stable operation, the value of R BIAS must be low enough to maintain the minimum operating current at the minimum and maximum load and supply voltage levels.

FIGURE 1. Typical Connections.

A 0.1µF load capacitor is recommended to maintain stabil-ity under varying load conditions. A minimum 0.01µF load capacitor is required for stable operation. Start-up time for the REF1112 will be affected, depending on the value of load capacitance and the bias currents being used. A 1µF power-supply bypass capacitor is recommended to mini-mize supply noise within the circuit.

The REF1112 shunt voltage reference provides a versatile function for low power and space-conservative applications.The REF1112 can be configured with an additional diode and NPN transistor to provide a temperature compensated current reference as shown in Figure 2. The REF112 can be scaled to provide extremely low power reference voltages.Figure 3 shows the REF1112 used as a 1V out, 3µA voltage reference, and in Figure 4 as a 2.5V reference on 1µA.

FIGURE 2. REF1112 Provides a Stable Current Source.

FIGURE 3. MicroPOWER 3µA 1V Voltage Reference.

FIGURE 4. 2.5V Reference on 1µA.

V

REF1112

6

SBOS283C

www.ti.com

FIGURE 5. Adjustable Voltage Shunt Reference.

For applications requiring a stable voltage reference ca-pable of sinking higher than 5mA of current, a REF1112combined with an OPA347 can sink up to 10mA of current. This configuration is shown in Figure 5, and through appropriate selection of R1 and R2, can be used to provide a wide range of stable reference voltages. The REF1112 is also useful for level shifting, and as shown in Figure 6, can be used to achieve the full input range of an analog-to-digital converter (ADC).

FIGURE 6. REF1112 Provides a Level Shift to Achieve Full ADC Input Range.

PACKAGING INFORMATION Orderable Device

Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball Finish MSL Peak Temp (3)REF1112AIDBZR

ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM REF1112AIDBZRG4

ACTIVE SOT-23DBZ 33000Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM REF1112AIDBZT

ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM REF1112AIDBZTG4

ACTIVE SOT-23DBZ 3250Green (RoHS &no Sb/Br)CU NIPDAU Level-1-260C-UNLIM (1)The marketing status values are defined as follows:

ACTIVE:Product device recommended for new designs.

LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.

NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.

PREVIEW:Device has been announced but is not in production.Samples may or may not be available.

OBSOLETE:TI has discontinued the production of the device.

(2)Eco Plan -The planned eco-friendly classification:Pb-Free (RoHS),Pb-Free (RoHS Exempt),or Green (RoHS &no Sb/Br)-please check http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD:The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1)lead-based flip-chip solder bumps used between the die and package,or 2)lead-based die adhesive used between the die and leadframe.The component is otherwise considered Pb-Free (RoHS compatible)as defined above.

Green (RoHS &no Sb/Br):TI defines "Green"to mean Pb-Free (RoHS compatible),and free of Bromine (Br)and Antimony (Sb)based flame retardants (Br or Sb do not exceed 0.1%by weight in homogeneous material)

(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications,and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and

belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.

PACKAGE OPTION ADDENDUM

www.ti.com 12-Mar-2008

TAPE AND REEL INFORMATION

*All dimensions are nominal Device Package Type Package Drawing

Pins

SPQ Reel Diameter (mm)Reel Width W1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W (mm)Pin1Quadrant REF1112AIDBZR SOT-23

DBZ 33000180.08.4 3.15 2.77 1.22 4.08.0Q3REF1112AIDBZT SOT-23DBZ 3250180.08.4 3.15 2.77 1.22

4.08.0Q3

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length(mm)Width(mm)Height(mm) REF1112AIDBZR SOT-23DBZ33000214.0199.055.0 REF1112AIDBZT SOT-23DBZ3250214.0199.055.0

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