
SILICON EPITAXIAL PLANAR DIODE
fast switching diode in MiniMELF case especially suited for automatic surface mounting
Absolute Maximum Ratings (T a = 25 O C)
Parameter Symbol Value Unit Peak Reverse Voltage V RM 100 V Reverse Voltage
V R 75 V Average Rectified Forward Current I F(AV) 200 mA Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms at t = 1 µs
I FSM
0.5 1 4
A
Power Dissipation P tot 500 1)
mW Junction Temperature T j 175 O C Storage Temperature Range
T S
- 65 to + 175
O
C
1)
Valid provided that electrodes are kept at ambient temperature.
LL-34
