2SK3018 SOT23

2SK3018 N-channel MOSFET

FEATURES

z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits z Easy to parallel Marking: KN

Equivalent circuit

MOSFET MAXIMUM RATINGS (T a = 25°C unless otherwise noted)

Symbol Parameter

Value Units V DS Drain-Source V oltage

30 V V GS Gate-Source Voltage ±20 V I D Continuous Drain Current 0.1 A P D Power Dissipation 0.35 W T J Junction Temperature 150 ℃ T stg Storage Temperature

-55~+150 ℃ R θJA

Thermal Resistance, Junction-to-Ambient

357

℃ /W

Parameter

Symbol

Test Condition Min Typ

Max

Units Off Characteristics

Drain-Source Breakdown Voltage V DS V GS = 0V, I D = 10µA 30

V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS = 0V 0.2

µA Gate –Source leakage current I GSS V GS =±20V, V DS = 0V

±2 Gate Threshold Voltage V GS(th) V DS = 3V, I D =100µA 0.8 1.5 V V GS = 4V, I D =10mA 8 Ω Drain-Source On-Resistance R DS(on)V GS =2.5V,I D =1mA 13

Ω Forward Transconductance g FS

V DS =3V, I D = 10mA

20

mS

Dynamic Characteristics * Input Capacitance C iss 13pF Output Capacitance

C oss 9pF Reverse Transfer Capacitance C rss

V DS =5V,V GS =0V,f =1MHz

4

pF

Switching Characteristics * Turn-On Delay Time t d(on) 15 ns Rise Time

t r 35 ns Turn-Off Delay Time t d(off) 80 ns Fall Time

t f

V GS =5V, V DD =5V,

I D =10mA, R g =10Ω, R L =500Ω,

80

ns

MOSFET ELECTRICAL CHARACTERISTICS(T a =25℃ unless otherwise noted)

*These parameters have no way to verify.

µA

0.00

0.05

0.10

0.150.20

0.2

0.40.60.8 1.0

0.1

1

10

100

20

40

60

D R A I N C U R R

E N T I D (A )

3

S O U R C E C U R R E N T I S (m A )

SOURCE TO DRAIN VOLTAGE V SD (V)

O N -R E S I S T A N C E R D S (O N ) (Ω)