AP3303J

N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge

BV DSS 25V ▼ Simple Drive Requirement R DS(ON)25m

Ω▼ Fast Switching

I D

28A

Description

Absolute Maximum Ratings

Symbol Units V DS V V GS

V I D @T C =25℃A I D @T C =100℃A I DM

A P D @T C =25℃W W/℃T STG ℃T J

℃

Symbol Value Unit Rthj-case Thermal Resistance Junction-case Max. 4.0℃/W Rthj-amb

Thermal Resistance Junction-ambient

Max.

110

℃/W

Data & specifications subject to change without notice

AP3303H/J

Parameter

Rating Drain-Source Voltage 25Gate-Source Voltage

Continuous Drain Current, V GS @ 10V 28Continuous Drain Current, V GS @ 10V 18Pulsed Drain Current 1130Operating Junction Temperature Range

-55 to 150

Linear Derating Factor 0.25Storage Temperature Range

Total Power Dissipation 31-55 to 150200811031

Thermal Data

Parameter

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3303J) is available for low-profile applications.

± 20G

D

S

TO-251(J)

G D S

TO-252(H)

Electrical Characteristics@T j =25o C(unless otherwise specified)

Symbol Parameter

Test Conditions

Min.Typ.

Max.Units BV DSS

Drain-Source Breakdown Voltage V GS =0V, I D =250uA 25--V ΔB V DSS /ΔT j

Breakdown Voltage Temperature Coefficient Reference to 25℃, I D =1mA

-0.02-V/℃R DS(ON)Static Drain-Source On-Resistance 2V GS =10V, I D =20A --25m ΩV GS(th)Gate Threshold Voltage V DS =V GS , I D =250uA 2-4V g fs Forward Transconductance

V DS =10V, I D =20A -20-S I DSS Drain-Source Leakage Current (T j =25o C)V DS =25V, V GS =0V --1uA Drain-Source Leakage Current (T j =150o C)

V DS =20V, V GS =0V --100uA I GSS Gate-Source Leakage V GS =--nA Q g Total Gate Charge 2I D =20A -14.524nC Q gs Gate-Source Charge V DS = 20V -3-nC Q gd Gate-Drain ("Miller") Charge V GS =10V -8.5-nC t d(on)Turn-on Delay Time 2V DS =15V -8.8-ns t r Rise Time

I D =20A

-65-ns t d(off)Turn-off Delay Time R G =3.3Ω,V GS =10V -11-ns t f Fall Time R D =0.75Ω-7-ns C iss Input Capacitance V GS =0V -340540pF C oss Output Capacitance

V DS =25V -250-pF C rss

Reverse Transfer Capacitance

f=1.0MHz

-

98

-pF

Source-Drain Diode

Symbol Parameter

Test Conditions

Min.Typ.Max.Units V SD

Forward On Voltage 2I S =20A, V GS =0V -- 1.5V t rr

Reverse Recovery Time I S =20A, V GS =0V ,-30.5-ns Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-29

-nC

Notes:

1.Pulse width limited by safe operating area.

2.Pulse width <300us , duty cycle <2%.

AP3303H/J

± 20V ±100

AP3303H/J

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode

Junction Temperature

AP3303H/J

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform