M8550 三极管- SOT-23

M8550 TRANSISTOR(PNP)

FEATURES Power dissipation

MARKING: Y21

MAXIMUM RATINGS (T A =25℃ unless otherwise noted)

Symbol Parameter Value Units V CBO Collector-Base Voltage -40 V V CEO Collector-Emitter Voltage -25 V V EBO Emitter-Base Voltage -6

V

I C Collector Current -Continuous -1 A P C Collector power dissipation 200 mW T j Junction Temperature 150 ℃ T stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol Test conditions MIN MAX

UNIT Collector-base breakdown voltage V(BR)CBO I C = -100μA , I E =0 -40 V Collector-emitter breakdown voltage V(BR)CEO *I C = -1mA , I B =0 -25

V

Emitter-base breakdown voltage V(BR)EBO I E = -100μA, I C =0

-6 V

Collector cut-off current I CBO V CB = -35V , I E =0 -0.1 μA Collector cut-off current I CEO

V CE = -20V , I B =0 -0.1 μA h FE(1) V CE =-1V, I C =-5mA 45 h FE(2) V CE =-1V, I C =-100mA 85 300 DC current gain

h FE(3)

V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C = -800mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat)

I C =-800mA, I B =-80mA

-1.2

V

Transition frequency

f T V CE =-6V, I C = -20mA f=30MHz

150 MHz

* Pulse Test :pulse width ≤ 300µs , duty cycle ≤2%.

CLASSIFICATION OF h FE(2)

Rank L H

Range

85-200 200-300