7N60 Power MOSFET

7N60

Power MOSFET

7.4 Amps, 600/650 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 7N60 is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

FEATURES

* R DS(ON) = 1.0Ω @V GS = 10 V

* Ultra low gate charge (typical 29 nC )

* Low reverse transfer Capacitance ( C RSS = typical 16pF ) * Fast switching capability * Avalanche energy tested

* Improved dv/dt capability, high ruggedness

SYMBOL

1.Gate

Lead-free: 7N60L Halogen-free: 7N60G

ORDERING INFORMATION

Ordering Number Pin Assignment

Normal Lead Free Plating Halogen Free Package 1 2 3 Packing

7N60-x-TA3-T 7N60L-x-TA3-T 7N60G-x-TA3-T TO-220 G D S Tube 7N60-x-TF1-T 7N60L-x-TF1-T 7N60G-x-TF1-T TO-220F1 G D S Tube 7N60-x-TF3-T 7N60L-x-TF3-T 7N60G-x-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn

ABSOLUTE MAXIMUM RATINGS (T C = 25°C, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT

7N60-A 600 V

Drain-Source Voltage 7N60-B V DSS

650 V

Gate-Source Voltage V GSS ±30 V Avalanche Current (Note 2) I AR 7.4 A

Continuous I D 7.4 A

Drain Current

Pulsed (Note 2) I DM 29.6

A Single Pulsed (Note 3)E AS 530 mJ

Avalanche Energy

Repetitive (Note 2) E AR 14.2 mJ

Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns

TO-220 142 W

Power Dissipation TO-220F/TO-220F1 P D

48 W

Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 19.5mH, I AS = 7.4A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C

4. I SD ≤ 7.4A, di/dt ≤ 200A/μs, V DD ≤ BV DSS , Starting T J = 25°C

THERMAL DATA

PARAMETER SYMBOL RATINGS UNIT

TO-220 62.5 °C/W

Junction to Ambient TO-220F/TO-220F1θJA

62.5 °C/W TO-220 0.88 °C/W

Junction to Case TO-220F/TO-220F1θJC

2.6 °C/W

ELECTRICAL CHARACTERISTICS (T C =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

OFF CHARACTERISTICS

7N60-A 600 V

Drain-Source Breakdown Voltage 7N60-B BV DSS V GS = 0V, I D = 250μA

650 V

Drain-Source Leakage Current I DSS V DS = 600V, V GS = 0V 1 μA

Forward V GS = 30V, V DS = 0V 100nA

Gate- Source Leakage Current Reverse I GSS

V GS = -30V, V DS = 0V -100nA

Breakdown Voltage Temperature Coefficient △BV DSS /△T J I D = 250μA,

Referenced to 25°C 0.67 V/°C

ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250μA 2.0 4.0V Static Drain-Source On-State Resistance R DS(ON) V GS = 10V, I D = 3.7A 1.0ΩDYNAMIC CHARACTERISTICS Input Capacitance C ISS 1400pF

Output Capacitance C OSS 180pF

Reverse Transfer Capacitance C RSS

V DS =25V, V GS =0V, f=1.0 MHz 16 21pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 70ns Turn-On Rise Time t R 170ns Turn-Off Delay Time t D(OFF) 140ns

Turn-Off Fall Time t F

V DD =300V, I D =7.4A, R G =25Ω

(Note 1, 2) 130ns Total Gate Charge Q G 29 38nC

Gate-Source Charge Q GS 7 nC

Gate-Drain Charge Q GD

V DS =480V, I D =7.4A, V GS =10 V

(Note 1, 2)

14.5 nC

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0V, I S = 7.4 A 1.4V

Maximum Continuous Drain-Source Diode

Forward Current

I S 7.4A

Maximum Pulsed Drain-Source Diode

Forward Current

I SM 29.6A

Reverse Recovery Time t RR 320 ns Reverse Recovery Charge Q RR

V GS = 0V, I S = 7.4 A, dI F / dt = 100A/μs (Note 1) 2.4 μC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature

TEST CIRCUITS AND WAVEFORMS

V DD

V GS (Driver)

I SD (D.U.T.)

Body Diode

Forward Voltage Drop

V DS (D.U.T.)

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

Fig. 1B Peak Diode Recovery dv/dt Waveforms

TEST CIRCUITS AND WAVEFORMS

(Cont.)

Fig. 2A Switching Test Circuit

Fig. 2B Switching Waveforms

Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform

R G

10V

L

V DD

V

BV DSS

I

D(t)

Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

TYPICAL CHARACTERISTICS

101100

Drain-Source Voltage, V DS (V)

D r a i n C u r r e n t , I D (A )

On-Region Characteristics

10100

10

Gate-Source Voltage, V

GS (V)

D r

a i n C u r r e n t ,

I

D

(

A )

Transfer Characteristics

10

1

D

r

a i

n -S o u r c e O n -R e s i s t a n c e , R D S (O N )

(Ω

)

R e v e r s e D

r a i n C u r

r e n t , I D R (A

)

C a p a c i t a n c e (p F

)

I D , D r a i n C u r r e n t (A

)

7N60 Power MOSFET UNISONIC TECHNOLOGIES CO., LTD

TYPICAL CHARACTERISTICS(Cont.)

and reliable and may be changed without notice.