IRFP250N

IRFP250N

HEXFET ® Power MOSFET

10/09/00

Parameter

Max.

Units

I D @ T C = 25°C Continuous Drain Current, V GS @ 10V 30I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 21A I DM

Pulsed Drain Current 120

P D @T C = 25°C Power Dissipation 214W Linear Derating Factor 1.4W/°C V GS Gate-to-Source Voltage

± 20V E AS Single Pulse Avalanche Energy 315mJ I AR Avalanche Current

30A E AR Repetitive Avalanche Energy 21mJ dv/dt Peak Diode Recovery dv/dt 8.6V/ns T J Operating Junction and

-55 to +175T STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C

Mounting torque, 6-32 or M3 srew

10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter

Typ.

Max.

Units

R θJC Junction-to-Case

–––0.7R θCS Case-to-Sink, Flat, Greased Surface 0.24–––°C/W

R θJA

Junction-to-Ambient

–––

40

Thermal Resistance

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Description

l Advanced Process Technology l Dynamic dv/dt Rating

l 175°C Operating Temperature l Fast Switching

l Fully Avalanche Rated l Ease of Paralleling

l

Simple Drive Requirements

IRFP250N

IRFP250N

IRFP250N

IRFP250N

IRFP250N

IRFP250N

IRFP250N