中国半导体照明产业的技术途径与优势

方大集团股份有限公司 深圳市方大国科光电技术有限公司 深圳市半导体照明工程研究与开发中心\n\nChinese Strengths in Semiconductor Lighting\nFrom Lumens/Watts To Dollars/Lumens\nAlan G. Li (李刚)\n\nChina FangDa Group Co. Ltd ShenZhen FangDa GuoKe Optronics Technical Co. Ltd ShenZhen R&D Center for Semiconductor Lighting Engineering\n\n深圳市方大国科光电技术有限公司\n\n\r\n

Outlines\n• • Current Status of High Power LEDs Review of Advanced Technologies\nShaped Chips; Flip-Chips; Vertical Chips; Photonic Crystal; Normal Chips; Multiple Chips\n\n• • • •\n\nForecast of Lumens/W in 3 Years Substantial Cost-Down Approaches\nLarge & Fast MOCVD/Chip-Processing Tools; Price Down of Expensive Raw Materials\n\nForecast of Dollars/Lumen in 3 Years Strengths & Major Challenges for Chinese Companies\n\n深圳市方大国科光电技术有限公司\n\n\r\n

2005~2009 大功率发光二极管效率\n(Efficiency of High Power LEDs from 2005 to 2009)\n\nCN Roadmap\n\nUS Roadmap\n\n300\n\n200\nNichia Nichia\n\n200 150 100 75 60\n瑞 丰\n\n100\nCree 十 五 攻 关\n\n2005\n\n2007\n\n2009\n\n2020\n\n深圳市方大国科光电技术有限公司\n\n\r\n

芯片外形技术\n(Chip-Shaping Technology)\n\nLumileds 倒金字塔形 AlInGaP/GaP芯片 几何形状。\n\nCree 金字塔形 GaN 芯片几何形状演化 过程 (from presentation by Cree)。\n\nThere is no news about shaping of LED chips grown on sapphire.\n\n深圳市方大国科光电技术有限公司\n\nM. R. Krames et al., Appl. Phys. Lett., 75(1999) 2365\n\n\r\n

倒装芯片技术 (Flip-Chip Technology)\n(Special Tools & Skills for Processing)\nFlip-Chips Made in China\n\n40mil Flip-Chips on Si Sub-mount LumiLeds 倒装焊芯片正面图(a)和断面图(b) 40mil Flip-Chips on Ceramic with Zener Diodes\nBreakthrough Supported by National Program over 2004~2005 in China (3 years behind)\n\nOsram 倒装金字塔形微观反射结构 AlInGaP 基芯片。\n\n深圳市方大国科光电技术有限公司\n\nJ.J. Wierer et al, Appl. Phys. Lett., 78(2001 ) 3379\n\n\r\n

倒装芯片技术 (Flip-Chip Technology)\n(Low Resistance & High Reflectivity Layers)\n\n不同金属基全方位反射膜反射率\n\nAg Reflector CIO AlAg P-Type GaN\n\n深圳市方大国科光电技术有限公司\n\nJ. K. Kim et al., Appl. Phys. Lett., 84(2004)4508 J.O. Song et al., Appl. Phys.Lett., 86(2005)62103 J.Y. Kim et al. Appl. Phys. Lett., 88(2006)43507\n\n\r\n

倒装芯片技术\n\n(Chip-Shaping Technology) (Low Refractive Index Transparent Inter-layers)\n\nRefractive Index • Nano-rod ITO 1.34 at 461nm • Normal ITO: 2.06 • Efficiency: up 31.6% 深圳市方大国科光电技术有限公司\nJ. K. Kim et al., Appl. Phys. Lett., 88(2006)13501\n\n\r\n

垂直芯片技术 (Vertical Chip Technology)\n(Special Tools & Skills for Wafer Bonding, Lift-Off & Surface Treatment)\n\nPEC Lift Off Technology Undercut up to 500 um Lift-off 100um/5um disk Laser Lift-Off Technology\n\n深圳市方大国科光电技术有限公司\n\nW.S. Wong et al., Appl. Phys. Lett., 77(2000)2822 A.R. Stonas et al., Appl. Phys. Lett., 78(2001)1945\n\n\r\n

垂直芯片技术 (Vertical Chip Technology)\n(PEC Roughing of Laser Lift-Off Surface)\n\n深圳市方大国科光电技术有限公司\n\nT. Fujii et., Appl. Phys. Lett., 84(2004)855 Y. Gao et al., Jpn. J. Appl. Phys., 43(2004) L637\n\n\r\n

垂直芯片技术 (Vertical Chip Technology)\n(Patterned Substrate for Micro-pillar Surface)\n\nMicro-pillar surface formed on patterned sapphire, laser lift-off, Cu electroplating. Efficiency: up 39%\n\n深圳市方大国科光电技术有限公司\n\nW.K. Wong et al, Appl. Phys. Lett., 88(2006)181113\n\n\r\n

光子晶体技术 (Photonic Crystal Technology)\n(电子束光刻和刻蚀工艺制备晶格常数级大小的栅格几何结构)\n\n(a) 含表面光子晶体的芯片发光正面图; (b) 芯片截面示意图; (c) 光子晶体表面 形貌; (d) 光子晶体截面形状\n\nleft: conventional structure right: lift-off structure\nJ. J. Wierer et. al. Appl. Phys. Lett., 84 (2004) 3885 A. David et al. Appl. Phy. Lett., 88 (2006) 133514\n\n深圳市方大国科光电技术有限公司\n\n\r\n

正装芯片技术\n(Horizontal Chip)\n>40 lumens for FangDa Horizontal Chips\nNichia Rh金属基微结构网 状透明导电薄膜芯片。\n\nAdvantages of High Power Normal Chips: • • • • • • 深圳市方大国科光电技术有限公司 Standard Processing High Yield No Problem for Heat Dissipation < 3W Standard Package Processing > 50lumen/W Flexible Overall Cost Saving\nZ.S. Zhang et al., Appl. Phys. Lett., 88 (2006)171103\n\n\r\n

正装芯片技术(Horizontal Chip Technology)\n(Micro-Chip Array)\n\n在相同条件下，微环芯片、微 柱芯片和平面芯片的发光功率 之比为2:1.3:1。\n\n深圳市方大国科光电技术有限公司\n\nH.W. Choi et al, Appl. Phys. Lett., 83(2003) 4483 A. Chakraborty et al. Appl. Phys. Lett., 88(2006)181120\n\n\r\n

正装芯片技术(Horizontal Chip Technology)\n(pGaN Random Roughness by Growth or PEC)\n\nTruncated micro-pyramid surface Metal cluster masks for wet etching 深圳市方大国科光电技术有限公司\nC. Huh et al., J. Appl. Phys., 93(2003)103505 J.K. Sheu et al., Appl. Phys. Lett., 88(2006)113505\n\n\r\n

正装芯片技术(Horizontal Chip Technology)\n(Surface Texture of ITO Layers)\n\nTiO2 mask, 250nm width 100nm depth\n\n深圳市方大国科光电技术有限公司\n\nH.G. Hong et al., Appl. Phys. Lett., 88(2006)103505\n\n\r\n

正装芯片技术(Horizontal Chip Technology)\n(ITO Random Roughness by Etching)\n\n140nm roughness, Polystyrene spheres for etching\n\n深圳市方大国科光电技术有限公司\n\nH.G. Hong et al., Appl. Phys. Lett., 86(2005)221101\n\n\r\n

多芯片集成技术\n(Multiple Chip Technology) Advantages: Low Costs; High Efficiency; Flexibility for Different Applications; Standard Package Processing Major Challenges: Low Reliability; Selection of Chips; Low Yields Multiple Horizontal High Power Chips\nUp to 9x 15mil chips for > 1W Up to 6x 40mil chips for > 5W FangDa Dragon E > 100 lumens Packaged Lamp at 5W.\n\nMultiple Flip-Chips\n\n深圳市方大国科光电技术有限公司\n\n\r\n

单项技术对发光效率之影响\n(Effect of New Technology on Efficiency)\n\nFlip-Chip Technology\n\nVertical-Chip Technology\n300%\n\n20% 15% 60% 100% 39% 0% 10% 20% 40% 60% 80% 100% 120%\n\nNew Reflector\n\nPhotonic Crystal\n\n100%\n\nMicro-Chip Array\n\nRough nGaN\n\n35%\n\nTexture ITO Rough pGaN\n\n28%\n\nRough ITO Micro-Chip Array\n\nLow Index Interlayer Rough nGaN (surface)\n\n20%\n\nPatterned Sapphier\n\n80%\n\nRough Top Sapphier\n\nPatterned Sapphier (lift-off) 0%\n\n39% 50% 100% 150% 200% 250% 300% 350%\n\n深圳市方大国科光电技术有限公司\n\n\r\n

单项技术对发光效率之影响\n(Effect of New Technology on Efficiency)\n\nHorizontal-Chip Technology\n300% Photonic Crystal 100% Micro-Chip Array 15% 35% 28% 30% 60% 39% 10% 10% 0% 50% 100% 150% 200% 250% 300% 350% Rough nGaN Texture ITO Rough ITO Low Index Interlayer Rough pGaN Patterned Sapphier Rough Sapphier Surface New Reflector\n\nStd 15mil Chips >50 lumens/W < 10 Chips for > 40 lumens at the cost of < RMB2~3.\n\n深圳市方大国科光电技术有限公司\n\n\r\n

Predicted Lumens/W for Different Types of Chips Over Next 3 Years\n300 250 200 150 100 50 0\n2005\n\nLumens/W\n\nFlip-Chip Horizontal Chip Vertical Chip Multiple Chip\n\n2006\n\n2007 Year\n\n2008\n\n2009\n\n2005 Flip-Chip Horizontal-Chip Vertical-Chip Multiple-Chip 35 30 40 60\n\n2006 57 58 90 80\n\n2007 80 73 109 115\n\n2008 120 110 163 140\n\n2009\n\n121 245\n\n深圳市方大国科光电技术有限公司\n\n\r\n

设备和原材料对成本之影响\n(Effect of New Tools and Raw Materials)\n\n2005\nEpi Cost Processing Major Factors\n\n2006\n\n2007\n250 300\n\n2008\n\n2009\n100 100\n\n500 500\n19x2, 24x2, 21x2 Dominated Fast ChipProcessing Tools\n\n30x2,42x2 Dominated\n\nLarge Scale Equipment\n\nNew Ways for Epi; New Substrates\n\n深圳市方大国科光电技术有限公司\n\n\r\n

单位流明成本之变化\n(Dollars per Lumen Over 3 Years)\nYear 2005 1.000\nFlip-Chip Horizontal Chip Multiple Chip LumiLEDs\n\n2006\n\n2007\n\n2008\n\n2009\n\nRMB/Lumens\n\n0.100\n\n0.010\n\n2005 Flip-Chip Horizontal Chip Multiple Chip 0.469 0.4046 0.2248\n\n2006 0.2415 0.165 0.1328\n\n2007 0.1028 0.0796 0.05\n\n2008 0.0494 0.0391 0.0341\n\n2009\n\n0.0255\n\n2006: LumiLEDs US$2.85 for 40-50 lumens è RMB0.5/Lumen\n\n深圳市方大国科光电技术有限公司\n\n\r\n

中国企业之优势和风险\n(Strengths and Risks for Chinese Companies)\n\nChinese Strengths for Semiconductor Lighting\n• • • Implementation of Flexible Cheap Technologies (multiple chip, horizontal chip technologies for < 150 lumens/W) Implementation of Matured Volume Dominated Packaging Technologies Close to End Users of Low/Medium Applications (Not TV backlighting in 2-3 Years) No Return of Investment for New Technologies No Return of Investment for New Equipments Short Life-time of Products (Inventory) No Advantage in Company Production Capacity No Advantage in R&D Investment Up to 10-12% Less in Company Profit of Local than Overseas Company (17% value added tax affects local companies heavily)\n\nMajor Risks for Chinese Companies\n• • • • • •\n\n深圳市方大国科光电技术有限公司\n\n\r\n