IRF5210

HEXFET ® Power MOSFET

PD - 91434A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Parameter

Max.Units I D @ T C = 25°C

Continuous Drain Current, V

GS @ -10V -40I

D @ T C = 100°C

Continuous Drain Current, V GS @ -10V -29A I DM

Pulsed Drain Current -140P D @T C = 25°C

Power Dissipation 200W Linear Derating Factor 1.3W/°C V GS

Gate-to-Source Voltage ± 20V E AS

Single Pulse Avalanche Energy 780mJ I AR

Avalanche Current -21A E AR

Repetitive Avalanche Energy 20mJ dv/dt

Peak Diode Recovery dv/dt -5.0V/ns T J

Operating Junction and -55 to + 175T STG Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )°C

Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)Absolute Maximum Ratings

Parameter

Typ.Max.Units R θJC

Junction-to-Case –––0.75R θCS

Case-to-Sink, Flat, Greased Surface 0.50–––°C/W

R θJA Junction-to-Ambient –––62Thermal Resistance

l

Advanced Process Technology l

Ultra Low On-Resistance l

Dynamic dv/dt Rating l

175°C Operating Temperature l

Fast Switching l

P-Channel l Fully Avalanche Rated Description

5/13/98

IRF5210

IRF5210

IRF5210